Giant Piezoresistive On/Off Ratios in Rare-Earth Chalcogenide Thin Films Enabling Nanomechanical Switching von Copel, M, Kuroda, M. A, Gordon, M. S, Liu, X.-H, Mahajan, S. S, Martyna, G. J, Moumen, N, Armstrong, C, Rossnagel, S. M, Shaw, T. M, Solomon, P. M, Theis, T. N, Yurkas, J. J, Zhu, Y, Newns, D. M

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First experimental results from IBM/TENN/TULANE/LLNL/LBL undulator beamline at the advanced light source von Jia, J. J., Callcott, T. A., Yurkas, J., Ellis, A. W., Himpsel, F. J., Samant, M. G., Stöhr, J., Ederer, D. L., Carlisle, J. A., Hudson, E. A., Terminello, L. J., Shuh, D. K., Perera, R. C. C.

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Reliability of MOS devices with tungsten gates von Palumbo, F., Lombardo, S., Stathis, J.H., Narayanan, V., McFeely, F.R., Yurkas, J.J.

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A simple in situ method to detect graphene formation at SiC surfaces von Oida, S., Hannon, J. B., Tromp, R. M., McFeely, F. R., Yurkas, J.

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Fabrication of midgap metal gates compatible with ultrathin dielectrics von Buchanan, D. A., McFeely, F. R., Yurkas, J. J.

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Interface studies of tungsten gate metal–oxide–silicon capacitors von Shang, Huiling, White, Marvin H., Guarini, Kathryn W., Solomon, Paul, Cartier, Eduard, McFeely, Fenton R., Yurkas, John J., Lee, Wen-Chin

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First Experimental Results from the IBM/Penn/Tulane/LBL Undulator Beamline at the ALS von Jia, J., Callcott, T.A., Yurkas, J., Ellis, A.W., Himpsel, F.J., Samant, M.G., Stohr, J., Ederer, D.L., Carlisle, J.A., Hudson, E.A., Terminello, L.J., Shuh, D.K., Perera, R.C.C.

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ENHANCING DRIVE CURRENT AND INCREASING DEVICE YIELD IN N-TYPE CARBON NANOTUBE FIELD EFFECT TRANSISTORS von Han, Shu-Jen, Yurkas, John J, Farmer, Damon B, Tang, Jianshi

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ENHANCING DRIVE CURRENT AND INCREASING DEVICE YIELD IN N-TYPE CARBON NANOTUBE FIELD EFFECT TRANSISTORS von Han, Shu-Jen, Yurkas, John J, Farmer, Damon B, Tang, Jianshi

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Enhancing drive current and increasing device yield in N-type carbon nanotube field effect transistors von Han, Shu-Jen, Yurkas, John J, Farmer, Damon B, Tang, Jianshi

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Enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors von Han, Shu-Jen, Yurkas, John J, Farmer, Damon B, Tang, Jianshi

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Decoupling Graphene from SiC(0001) via Oxidation von Oida, S, McFeely, F R, Hannon, J B, Tromp, R M, Copel, M, Chen, Z, Sun, Y, Farmer, D B, Yurkas, J

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Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony von Gardner, Jennifer L, McFeely, Fenton R, Yurkas, John J

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Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony von MCFEELY FENTON R, GARDNER JENNIFER L, YURKAS JOHN J

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Metal catalyzed selective deposition of materials including germanium and antimony von Guha, Supratik, Mc Feely, Fenton R, Yurkas, John J

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Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony von Gardner, Jennifer L, Mc Feely, Fenton R, Yurkas, John J

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Process for chemical vapor deposition of materials with via filling capability and structure formed thereby von MCFEELY FENTON R, YURKAS JOHN J, SCHROTT ALEJANDRO G

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Process for chemical vapor deposition of materials with via filling capability and structure formed thereby von McFeely, Fenton R, Schrott, Alejandro G, Yurkas, John J

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Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation von Hannon, James B, McFeely, Fenton R, Oida, Satoshi, Yurkas, John J

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Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation von MCFEELY FENTON R, OIDA SATOSHI, HANNON JAMES B, YURKAS JOHN J

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