Activation of the extrinsic caspase pathway in cultured cortical neurons requires p53-mediated down-regulation of the X-linked inhibitor of apoptosis protein to induce apoptosis von Tun, Christina, Guo, Weiqun, Nguyen, Huy, Yun, Bomy, Libby, Randell T, Morrison, Richard S, Garden, Gwenn A

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The glial response to CNS HIV infection includes p53 activation and increased expression of p53 target genes von Jayadev, Suman, Yun, Bomy, Nguyen, Huy, Yokoo, Hideaki, Morrison, Richard S, Garden, Gwenn A

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Effects of si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory von BAOWEI QIAO, JIE FENG, YUNFENG LAI, YUN LING, YINYIN LIN, TING'AO TANG, BINGCHU CAI, CHEN, Bomy

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Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory von Lai, Yunfeng, Qiao, Baowei, Feng, Jie, Ling, Yun, Lai, Lianzhang, Lin, Yinyin, Tang, Ting’ao, Cai, Bingchu, Chen, Bomy

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Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50) for Phase Change Memory von Yun-Feng, Lai, Jie, Feng, Bao-Wei, Qiao, Xiao-Gang, Huang, Yan-Fei, Cai, Yin-Yin, Lin, Ting-Ao, Tang, Bing-Chu, Cai, Bomy, Chen

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Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance von Yan-Fei, Cai, Peng, Zhou, Yin-Yin, Lin, Ting-Ao, Tang, Liang-Yao, Chen, Jing, Li, Bao-Wei, Qiao, Yun-Feng, Lai, Jie, Feng, Bing-Chu, Cai, Bomy, Chen

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Effects of Si doping on the structural and electrical properties of Ge 2Sb 2Te 5 films for phase change random access memory von Qiao, Baowei, Feng, Jie, Lai, Yunfeng, Ling, Yun, Lin, Yinyin, Tang, Ting’ao, Cai, Bingchu, Chen, Bomy

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Study of Ge2Sb2Te5 Film for Nonvolatile Memory Medium von Baowei QIAO, Yunfeng LAI, Jie FENG, Yun LING, Yinyin LIN, Ting'ao TANG, Bingchu CAI, Bomy CHEN

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Effects of Si Doping on Phase Transition of Ge 2 Sb 2 Te 5 Films by in situ Resistance Measurements von Ling, Yun, Lin, Yinyin, Qiao, Baowei, Lai, Yunfeng, Feng, Jie, Tang, Tingao, Cai, Bingchu, Chen, Bomy

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Improvement of Electrical Properties of the Ge 2 Sb 2 Te 5 Film by Doping Si for Phase-Change Random Access Memory von Bao-Wei, Qiao, Jie, Feng, Yun-Feng, Lai, Yun, Ling, Yin-Yin, Lin, Ting-Ao, Tang, Bing-Chu, Cai, Bomy, Chen

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Improvement of Electrical Properties of the Ge2Sb2Te5 Film by Doping Si for Phase-Change Random Access Memory von Bao-Wei, Qiao, Jie, Feng, Yun-Feng, Lai, Yun, Ling, Yin-Yin, Lin, Ting-Ao, Tang, Bing-Chu, Cai, Bomy, Chen

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Nitrogen and Silicon Co-Doping of Ge 2 Sb 2 Te 5 Thin Films for Improving Phase Change Memory Performance von Yan-Fei, Cai, Peng, Zhou, Yin-Yin, Lin, Ting-Ao, Tang, Liang-Yao, Chen, Jing, Li, Bao-Wei, Qiao, Yun-Feng, Lai, Jie, Feng, Bing-Chu, Cai, Bomy, Chen

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Nitrogen-Doped Ge2Sb2Te5 Films for Nonvolatile Memory von Lai, Yunfeng, Qiao, Baowei, Feng, Jie, Ling, Yun, Lai, Lianzhang, Lin, Yinyin, Tang, Ting'ao, Cai, Bingchu, Chen, Bomy

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Design of Multi-States Storage Medium for Phase Change Memory von Feng, Jie, Lai, Yun-feng, Qiao, Bao-wei, Cai, Bing-chu, Lin, Yin-yin, Tang, Ting-ao, Chen, Bomy

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A novel edge contact type cell for phase change RAM using N-doped GeSbTe films von Yun Ling, Yinyin Lin, Lianzhang Lai, Baowei Iao, Yunfeng Lai, Jie Feng, Ting ao Tang, Bingchu Cai, Bomy Chen

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