On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers von Bank, S.R., Goddard, L.L., Wistey, M.A., Yuen, H.B., Harris, J.S.

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GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm von Wistey, M.A., Bank, S.R., Bae, H.P., Yuen, H.B., Pickett, E.R., Goddard, L.L., Harris, J.S.

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Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy von Kim, S.M., Yuen, H.B., Hatami, F., Chin, A., Harris, J.S.

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Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs von Bank, S.R., Wistey, M.A., Goddard, L.L., Yuen, H.B., Lordi, V., Harris, J.S.

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On the temperature sensitivity of 1.5-[micro]m GaInNAsSb lasers von Bank, S.R, Goddard, L.L, Wistey, M.A, Yuen, H.B, Harris, J.S

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Monolithic 1.55 µm GaInNAsSb quantum well passively modelocked lasers von Xin, Y.-C., Lin, C.-Y., Li, Y., Bae, H.P., Yuen, H.B., Wistey, M.A., Harris, J.S., Bank, S.R., Lester, L.F.

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Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs von Bank, S.R., Bae, H.P., Yuen, H.B., Wistey, M.A., Goddard, L.L., Harris, J.S.

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Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms von Kudrawiec, R., Gladysiewicz, M., Motyka, M., Misiewicz, J., Yuen, H.B., Bank, S.R., Wistey, M.A., Bae, H.P., Harris, James S.

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Monolithic, GaInNAsSb VCSELs at 1.46 µm on GaAs by MBE von Wistey, M.A., Bank, S.R., Yuen, H.B., Goddard, L.L., Harris, J.S.

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Recent Progress on 1.55- \mu} Dilute-Nitride Lasers von Bank, S.R., Hopil Bae, Goddard, L.L., Yuen, H.B., Wistey, M.A., Kudrawiec, R., Harris, J.S.

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Recent Progress on 1.55- [mu]m Dilute-Nitride Lasers von Bank, S R, Bae, Hopil, Goddard, L L, Yuen, H B, Wistey, M A, Kudrawiec, R, Harris, J S

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Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 μm von KUDRAWIEC, R, GLADYSIEWICZ, M, MISIEWICZ, J, YUEN, H. B, BANK, S. R, WISTEY, M. A, BAE, H. P, HARRIS, James S

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Photoreflectance spectroscopy of a Ga 0.62In 0.38N 0.026As 0.954Sb 0.02/GaAs single quantum well tailored at 1.5 μm von Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H.B., Bank, S.R., Wistey, M.A., Bae, H.P., Harris, James S.

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High-performance 1.5 µm GaInNAsSb lasers grown on GaAs von Bank, S.R., Wistey, M.A., Goddard, L.L., Yuen, H.B., Bae, H.P., Harris, J.S.

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Low-threshold continuous-wave 1.5-[mu]m GaInNAsSb lasers grown on GaAs von Bank, S.R, Wistey, M.A, Goddard, L.L, Yuen, H.B, Lordi, V, Harris, J.S

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Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy von Wistey, M. A., Bank, S. R., Yuen, H. B., Harris, J. S., Oye, M. M., Holmes, A. L.

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Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 µm von Gollub, D., Kamp, M., Forchel, A., Seufert, J., Bank, S.R., Wistey, M.A., Yuen, H.B., Goddard, L.L., Harris, J.S.

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Low-threshold CW GaInNAsSb/GaAs laser at 1.49 µm von Bank, S.R., Wistey, M.A., Yuen, H.B., Goddard, L.L., Ha, W., Harris, J.S.

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The role and suppression of carrier leakage in 1.5 /spl mu/m GaInNAsSb/GaAs lasers von Bank, S.R., Wistey, M.A., Yuen, H.B., Goddard, L.L., Harris, J.S.

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Towards a monolithically-integrated electrically-pumped Si light emitter technology using epitaxial erbium oxide von Sabnis, V.A., Yuen, H.B., Jamora, A., Semans, S., Atanackovic, P., Weldon, J.

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