High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications von Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu, Ting-En Hsieh, Lumbantoruan, Franky Juanda, Yu-Hsuan Ho, Jian-You Chen, Kun-Sheng Yang, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Quang Ho Luc, Yueh-Chin Lin, Chang, Edward Yi

Volltext

Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer von Ting-En Hsieh, Chang, Edward Yi, Yi-Zuo Song, Yueh-Chin Lin, Huan-Chung Wang, Shin-Chien Liu, Salahuddin, Sayeef, Hu, Chenming Calvin

Volltext

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface von Luong, Tien Tung, Lumbantoruan, Franky, Chen, Yen‐Yu, Ho, Yen‐Teng, Weng, You‐Chen, Lin, Yueh‐Chin, Chang, Shane, Chang, Edward‐Yi

Volltext

GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications von Shih-Chien Liu, Bo-Yuan Chen, Yueh-Chin Lin, Ting-En Hsieh, Huan-Chung Wang, Chang, Edward Yi

Volltext

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications von Lee, Ming-Wen, Chuang, Cheng-Wei, Gamiz, Francisco, Chang, Edward-Yi, Lin, Yueh-Chin

Volltext

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications von Lee, Ming-Wen, Lin, Yueh-Chin, Lai, Kuan-Hsien, Weng, You-Chen, Hsu, Heng-Tung, Chang, Edward Yi

Volltext

A Tall Gate Stem GaN HEMT with Improved Power Density and Efficiency at Ka-Band von Lee, Ping-Hsun, Lin, Yueh-Chin, Hsu, Heng-Tung, Tsao, Yi-Fan, Dee, Chang-Fu, Su, Pin, Chang, Edward Yi

Volltext

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications von Lee, Ming-Wen, Lin, Yueh-Chin, Hsu, Heng-Tung, Gamiz, Francisco, Chang, Edward-Yi

Volltext

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications von Tseng, Howie, Lin, Yueh-Chin, Cheng, Chieh, Chen, Po-Wei, Hsu, Heng-Tung, Tsao, Yi-Fan, Chang, Edward Yi

Volltext

Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application von Lee, Ping-Hsun, Lin, Yueh-Chin, Hsu, Heng-Tung, Yu, Cheng-Hsien, Tsao, Yi-Fan, Su, Pin, Chang, Edward Yi

Volltext

Investigation of the Effect of Different SiNx Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band von Hsu, Che-Wei, Lin, Yueh-Chin, Lee, Ming-Wen, Chang, Edward-Yi

Volltext

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications von Lee, Ming-Wen, Lin, Yueh-Chin, Chang, Po-Sheng, Tsao, Yi-Fan, Hsu, Heng-Tung, Dee, Chang-Fu, Chang, Edward Yi

Volltext

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications von Wang, Chun, Chen, Yu-Chiao, Hsu, Heng-Tung, Tsao, Yi-Fan, Lin, Yueh-Chin, Dee, Chang-Fu, Chang, Edward-Yi

Volltext

Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment von Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Shih-Chien Liu, Yen-Ku Lin, Sze, Simon M., Chang, Edward Yi

Volltext

Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation von Wu, Chia-Hsun, Han, Ping-Cheng, Luc, Quang Ho, Hsu, Ching-Yi, Hsieh, Ting-En, Wang, Huan-Chung, Lin, Yen-Ku, Chang, Po-Chun, Lin, Yueh-Chin, Chang, Edward Yi

Volltext

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer von Weng, You-Chen, Lin, Yueh-Chin, Hsu, Heng-Tung, Kao, Min-Lu, Huang, Hsuan-Yao, Ueda, Daisuke, Ha, Minh-Thien-Huu, Yang, Chih-Yi, Maa, Jer-Shen, Chang, Edward-Yi, Dee, Chang-Fu

Volltext

Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications von Huang, Kuan Ning, Lin, Yueh-Chin, Lin, Jia-Ching, Hsu, Chia Chieh, Lee, Jin Hwa, Wu, Chia-Hsun, Yao, Jing Neng, Hsu, Heng-Tung, Nagarajan, Venkatesan, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chien, Chao Hsin, Chang, Edward Yi

Volltext

InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment von Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Yen-Ku Lin, Chia-Hsun Wu, Sze, Simon M., Chang, Edward Yi

Volltext

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants von Wang, Huan-Chung, Hsieh, Ting-En, Lin, Yueh-Chin, Luc, Quang Ho, Liu, Shih-Chien, Wu, Chia-Hsun, Dee, Chang Fu, Majlis, Burhanuddin Yeop, Chang, Edward Yi

Volltext

InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D von Chang, Po-Chun, Hsiao, Chih-Jen, Lumbantoruan, Franky Juanda, Wu, Chia-Hsun, Lin, Yen-Ku, Lin, Yueh-Chin, Sze, Simon M., Chang, Edward Yi

Volltext