Effects of Gamma Irradiation on Magnetic Properties of Double-Interface CoFeB/MgO Multifilms von Wang, Bi, Wang, Zhaohao, Cao, Kaihua, Bi, Xiao, Zhao, Yuanfu, Zhang, Youguang, Zhao, Weisheng

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Radiation impact of swift heavy ion beams on double-interface CoFeB/MgO magnetic tunnel junctions von Wang, Bi, Wang, Zhaohao, Du, Ao, Qiang, You, Cao, Kaihua, Zhao, Yuanfu, Zheng, Hongchao, Yan, Shaohua, Zhai, Pengfei, Liu, Jie, Guo, Gang, Bai, Yumeng, Wang, Jun, Zhao, Weisheng

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A Fast Template Matching Scheme of Visible and Infrared Image Under Occluded Scenarios von Mei, Lichun, Wang, Huaiye, Wang, Caiyun, Zhao, Yuanfu, Zhang, Jun, Zhao, Xiaoxia

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SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance von Zhou, Xintian, Gong, Hao, Jia, Yunpeng, Hu, Dongqing, Wu, Yu, Xia, Tian, Pang, Haoyang, Zhao, Yuanfu

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SEU and SET of 65 Bulk CMOS Flip-flops and Their Implications for RHBD von Zhao, Yuanfu, Wang, Liang, Yue, Suge, Wang, Dan, Zhao, Xinyuan, Sun, Yongshu, Li, Dongqiang, Wang, Fuqing, Yang, Xiaoqian, Zheng, Hongchao, Ma, Jianhua, Fan, Long

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A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode von Li, Xinyu, Jia, Yunpeng, Zhou, Xintian, Zhao, Yuanfu, Wu, Yu, Hu, Dongqing, Fang, Xingyu, Deng, Zhonghan

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Development and Challenges of Reliability Modeling from Transistors to Circuits von Yang, Xinhuan, Sang, Qianqian, Wang, Chuanzheng, Yu, Mingyan, Zhao, Yuanfu

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High energy proton and heavy ion induced single event transient in 65-nm CMOS technology von Liu, Jiaqi, Zhao, Yuanfu, Wang, Liang, Wang, Dan, Zheng, Hongchao, Chen, Maoxin, Shu, Lei, Li, Tongde, Li, Dongqiang, Guo, Wei

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Experimental Demonstration of Dual-Mode PUF/Memory Based on SOT-MRAM Array von Wang, Min, Hou, Zhengyi, Jiang, Chuanpeng, Zhao, Yuanfu, Wang, Bi, Zhao, Weisheng, Wang, Zhaohao

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SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness von Zhou, Xintian, Zhang, Shida, Li, Mingwei, Jia, Yunpeng, Hu, Dongqing, Wu, Yu, Zhao, Yuanfu

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SiC Double-Trench MOSFETs With Embedded MOS-Channel Diode von Zhou, Xintian, Pang, Haoyang, Jia, Yunpeng, Hu, Dongqing, Wu, Yu, Tang, Yun, Xia, Tian, Gong, Hao, Zhao, Yuanfu

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A high-efficiency aging test with new data processing method for semiconductor device von Yang, Xinhuan, Sang, Qianqian, Zhang, Jianyu, Wang, Chuanzheng, Yu, Mingyan, Zhao, Yuanfu

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Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process von Li, Xinyu, Jia, Yunpeng, Zhou, Xintian, Zhao, Yuanfu, Wang, Liang, Li, Tongde, Fang, Xingyu, Jia, Guo, Deng, Zhonghan

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Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS von Zhou, Xin, Yuan, Zhangyi'an, Shu, Lei, Qiao, Ming, Lu, Zhenlin, Zhao, Yuanfu, Li, Zhaoji, Zhang, Bo

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Multi-bits error detection and fast recovery in RISC cores von 王晶 杨星 赵元富 张伟功 申娇 邱柯妮

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22nm FDSOI SRAM single event upset simulation analysis von Yuan, Jingshuang, Zhao, Yuanfu, Wang, Liang, Li, Tongde, Sui, Chenglong

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Evaluation of space radiation effects on FinFET oxide layer with Geant4 simulation von Zhang, Jianyu, Hua, Yang, Huang, Sichong, Li, Tongde, Wang, Liang, Zhang, Xing, Zhao, Yuanfu

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Novel Radiation Hardening Read/Write Circuits Using Feedback Connections for Spin-Orbit Torque Magnetic Random Access Memory von Wang, Bi, Wang, Zhaohao, Wu, Bi, Bai, Yumeng, Cao, Kaihua, Zhao, Yuanfu, Zhang, Youguang, Zhao, Weisheng

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An aging simulation method based on the change of input vector inside the critical path von Sang, Qianqian, Yang, Xinhuan, Wang, Liang, Wang, Shuo, Wang, Chuanzheng, Yu, Mingyan, Zhao, Yuanfu

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Radiation Hardened 12T SRAM With Crossbar-Based Peripheral Circuit in 28nm CMOS Technology von Han, Yuanyuan, Li, Tongde, Cheng, Xu, Wang, Liang, Han, Jun, Zhao, Yuanfu, Zeng, Xiaoyang

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