Deployment of the First Commercial LWA Service von Tu, Yuan-Kuang, Lee, Cheng-Hua, Liu, Chia-Horng, Chia, Chung-Yung, Chen, Yuan-Kai, Lin, Yi-Bing

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IMS emergency services: a preliminary study von Lin, Yi-Bing, Tsai, Meng-Hsun, Tu, Yuan-Kuang

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Managing Clouds, Smart Networks and Services: A Report on APNOMS 2011 von Hong, James Won-Ki, Tu, Yuan-Kuang, Hong, Choong Seon, Tseng, Shian-Shyong, Kiriha, Yoshiaki, Chao, Han-Chieh, Zhanikeev, Marat, Song, Wang-Cheol

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Implementing Value Added Applications in Next Generation Networks von Ho, Yeh-Chin, Lin, Yi-Bing, Liou, Ren-Huang, Tu, Yuan-Kuang

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High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers von Tsai, Chang-Da, Shiao, Hung-Pin, Lee, Ching-Ting, Tu, Yuan-Kuang

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Relaxation of thermal stresses in double-coated optical fibers von Shiue, Sham-Tsong, Tu, Yuan-Kuang

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Growth and Performance Study of Aluminum-Free InGaAs/GaAs/InGaAsP Strained Quantum-Well Pump Lasers von Shiao, Hung-Pin, Lee, Hsin-Ying, Lin, Yow-Jon, Tu, Yuan-Kuang, Lee, Ching-Ting

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High responsivity GaInAs PIN photodiode by using erbium gettering von Ho, Wen-Jeng, Wu, Meng-Chyi, Tu, Yuan-Kuang, Shih, Hung-Hui

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Resistance to External Optical Feedback of Low-Chirp Strained-Quantum-Well Complex-Coupled Distributed-Feedback Laser von WANG, C.-Y, CHUANG, Z.-M, LIAO, H. H, LIN, W, TU, Y.-K, LEE, C.-T

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High-performance large-area InGaAs MSM photodetectors with a pseudomorphic InGaP cap layer von Yuang, Rong-Heng, Shieh, Hung-Chang, Chien, Yi-Jiunn, Chan, Yi-Jen, Chyi, Jen-Inn, Lin, Wei, Tu, Yuan-Kuang

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Erbium doping in InGaAsP grown by liquid-phase epitaxy von Wu, Meng-Chyi, Chen, En-Hsing, Chin, Tsung-Shune, Tu, Yuan-Kuang

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Countermeasures of Stimulated-Raman-Scattering-Induced Video Distortion in 1.65 µm Optical Time-domain Reflectometer On-line Monitoring 1.55 µm Cable Television System von Tsai, Szu-Chi, Tu, Yuan-Kuang, Chen, Yung-Kuang

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Network evolution for green ICT: CHT's Light-Era von Yuan-Kuang Tu

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Novel binary buffer layers for applications in the heteroepitaxy of highly mismatched In0.53Ga0.47As epilayers grown on GaAs substrates von Chang, Shou-Zen, Lee, Si-Chen, Shiao, Hung-Pin, Lin, Wei, Tu, Yuan-Kuang

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Growth and characterization of In0.83Ga0.17As0.39P0.61 layers by liquid-phase epitaxy using erbium gettering von MENG-CHYI WU, CHENG-MING CHIU, YUAN-KUANG TU

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Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier von Pan, Jen-Wei, Chau, Ken-Gi, Chyi, Jen-Inn, Tu, Yuan-Kuang, Liaw, Jy-Wang

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The InxGa1−xAsyP1−y (0.53<x<1,0<y<1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy von Lin, Wei, Tu, Yuan-Kuang, Dai, Ting-Arn, Ho, Wen-Jeng, Lee, Gwo-Yue, Shiao, Hung-Pin

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Low threshold 1.5 μm quantum well lasers with continuous linear-graded-index InGaAsP layers prepared by organometallic vapor-phase epitaxy von Lin, Wei, Chang, Chwan-Yang, Tu, Yuan-Kuang, Dai, Ting-Arn, Ho, Wen-Jeng, Lee, Gwo-Yue, Shi, Tian-Tsorng, Shiao, Hung-Pin

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Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals von Lee, Ching-Ting, Shiao, Hung-Pin, Yeh, Nien-Tze, Tsai, Chang-Da, Lyu, Yen-Tang, Tu, Yuan-Kuang

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Fabrication and characterization of high-performance planar InGaAs/InP separate absorption, grading and multiplication avalanche photodetectors von Ho, Wen-Jeng, Wu, Meng-Chyi, Tu, Yuan-Kuang

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