Diamond-Shaped e-SiGe Optimization by TCAD Simulation to Improve P-type MOSFET Performance for 28nm Logic Technology and Beyond von Wu, Hong, Pan, ZiCheng, Shi, XueJie, Lee, Byunghak, Ding, Yu, He, FengYing, Ye, Bin, Yu, TzuChiang, He, YongGen, Zhang, HaiYang, Yu, Shaofeng

Volltext

eSiGe Global and Micro Loading Effect Study in High Performance 45nm CMOS Technology von He, Yonggen, Tu, Huojin, Lin, Jing, Song, Hualong, Wang, Jun, Ma, Guiyin, Xu, Weizhong, Ye, Bin, Yu, Tzuchiang, Wu, Jingang

Volltext

A Novel Shallow Trench Isolation Liner Dielectric to Enhance NMOS Performance toward 45nm and Beyond von He, Yonggen, Yu, Guobing, Wu, Bing, Chen, Yong, Liu, HaiLong, Yue, Longyi, Ye, Bin, Yu, Tzu Chiang, Dai, Haibo, Lu, Wei, Wu, Jinggang

Volltext

Investigation of Laser Spike Anneal Dwell Time and It's Compatibility with Embedded-SiGe von He, Yonggen, Chen, Yong, Lu, Jiongping, Wu, Jingang, Xu, Chuanjin, Yu, Tzuchiang, Owen, David M., Zhang, Yun, Shetty, Shrinivas

Volltext

Investigation of Intermittent Haze in 300mm SiGe Epitaxy Process and its Impact on PMOS Device Performance von He, Yonggen, He, Youfeng, Tu, Huojin, Jin, Lan, Lin, Jing, Xu, Weizhong, Yu, Tzu Chiang, Lu, Wei, Wu, Jinggang, Wang, Chenyu, Cong, Zhepeng, Tang, Ji Yue

Volltext

Constitutive Behaviors of Discontinous Reinforced Composites von Ji, Bao Hua, Wang, Tzu Chiang

Volltext

Liquid crystal display device and method for manufacturing the same von JEN, CHIENCHIH, YU, HUEICHUNG, LIAO, TZUCHIANG

Volltext bestellen