Momentum(k)-space carrier separation using SiGeSn alloys for photodetector applications von McCarthy, Tyler T., Ju, Zheng, Schaefer, Stephen, Yu, Shui-Qing, Zhang, Yong-Hang

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Achievable Performance of Uncooled Homojunction GeSn Mid-Infrared Photodetectors von Chang, Guo-En, Yu, Shui-Qing, Liu, Jifeng, Cheng, Hung-Hsiang, Soref, Richard A., Sun, Greg

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Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence von Ghetmiri, Seyed Amir, Du, Wei, Margetis, Joe, Mosleh, Aboozar, Cousar, Larry, Conley, Benjamin R., Domulevicz, Lucas, Nazzal, Amjad, Sun, Greg, Soref, Richard A., Tolle, John, Li, Baohua, Naseem, Hameed A., Yu, Shui-Qing

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Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth von Dou, Wei, Benamara, Mourad, Mosleh, Aboozar, Margetis, Joe, Grant, Perry, Zhou, Yiyin, Al-Kabi, Sattar, Du, Wei, Tolle, John, Li, Baohua, Mortazavi, Mansour, Yu, Shui-Qing

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“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes von Chang, Guo-En, Yu, Shui-Qing, Sun, Greg

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Endothelial cell CD36 optimizes tissue fatty acid uptake von Son, Ni-Huiping, Basu, Debapriya, Samovski, Dmitri, Pietka, Terri A, Peche, Vivek S, Willecke, Florian, Fang, Xiang, Yu, Shui-Qing, Scerbo, Diego, Chang, Hye Rim, Sun, Fei, Bagdasarov, Svetlana, Drosatos, Konstantinos, Yeh, Steve T, Mullick, Adam E, Shoghi, Kooresh I, Gumaste, Namrata, Kim, KyeongJin, Huggins, Lesley-Ann, Lhakhang, Tenzin, Abumrad, Nada A, Goldberg, Ira J

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Electrically injected GeSn lasers on Si operating up to 100  K von Zhou, Yiyin, Miao, Yuanhao, Ojo, Solomon, Tran, Huong, Abernathy, Grey, Grant, Joshua M., Amoah, Sylvester, Salamo, Gregory, Du, Wei, Liu, Jifeng, Margetis, Joe, Tolle, John, Zhang, Yong-hang, Sun, Greg, Soref, Richard A., Li, Baohua, Yu, Shui-Qing

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Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate von Stanchu, Hryhorii V., Kuchuk, Andrian V., Mazur, Yuriy I., Margetis, Joe, Tolle, John, Yu, Shui-Qing, Salamo, Gregory J.

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Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics von Tran, Huong, Du, Wei, Ghetmiri, Seyed A., Mosleh, Aboozar, Sun, Greg, Soref, Richard A., Margetis, Joe, Tolle, John, Li, Baohua, Naseem, Hameed A., Yu, Shui-Qing

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All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K von Margetis, Joe, Zhou, Yiyin, Dou, Wei, Grant, Perry C., Alharthi, Bader, Du, Wei, Wadsworth, Alicia, Guo, Qianying, Tran, Huong, Ojo, Solomon, Abernathy, Grey, Mosleh, Aboozar, Ghetmiri, Seyed A., Thompson, Gregory B., Liu, Jifeng, Sun, Greg, Soref, Richard, Tolle, John, Li, Baohua, Mortazavi, Mansour, Yu, Shui-Qing

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High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging von Tran, Huong, Pham, Thach, Du, Wei, Zhang, Yang, Grant, Perry C., Grant, Joshua M., Sun, Greg, Soref, Richard A., Margetis, Joe, Tolle, John, Li, Baohua, Mortazavi, Mansour, Yu, Shui-Qing

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Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications von Tran, Huong, Pham, Thach, Margetis, Joe, Zhou, Yiyin, Dou, Wei, Grant, Perry C, Grant, Joshua M, Al-Kabi, Sattar, Sun, Greg, Soref, Richard A, Tolle, John, Zhang, Yong-Hang, Du, Wei, Li, Baohua, Mortazavi, Mansour, Yu, Shui-Qing

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Strain-driven anomalous elastic properties of GeSn thin films von Lytvyn, Petro, Kuchuk, Andrian, Kondratenko, Serhiy, Stanchu, Hryhorii, Malyuta, Sergii V., Yu, Shui-Qing, Mazur, Yuriy I., Salamo, Gregory J.

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Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules von Gonzalez, David, Lai, Pengyu, Chinnaiyan, Sudharsan, Ahmed, Salahaldein, Dong, Binzhong, Gong, Yipin, Mantooth, H. Alan, Yu, Shui-Qing, Chen, Zhong

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Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx von Du, Wei, Ghetmiri, Seyed A., Conley, Benjamin R., Mosleh, Aboozar, Nazzal, Amjad, Soref, Richard A., Sun, Greg, Tolle, John, Margetis, Joe, Naseem, Hameed A., Yu, Shui-Qing

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Design and optimization of high temperature optocouplers as galvanic isolation von Sabbar, Abbas, Madhusoodhanan, Syam, Tran, Huong, Dong, Binzhong, Wang, Jiangbo, Mantooth, Alan, Yu, Shui-Qing, Chen, Zhong

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Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well von Grant, Perry C., Webster, Preston T., Carrasco, Rigo A., Logan, Julie V., Hains, Christopher P., Gajowski, Nathan, Yu, Shui-Qing, Li, Baohua, Morath, Christian P., Maestas, Diana

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High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules von Madhusoodhanan, Syam, Sabbar, Abbas, Tran, Huong, Lai, Pengyu, Gonzalez, David, Mantooth, Alan, Yu, Shui-Qing, Chen, Zhong

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Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration von Eales, Timothy D., Marko, Igor P., Schulz, Stefan, O’Halloran, Edmond, Ghetmiri, Seyed, Du, Wei, Zhou, Yiyin, Yu, Shui-Qing, Margetis, Joe, Tolle, John, O’Reilly, Eoin P., Sweeney, Stephen J.

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Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure von Du, Wei, Ghetmiri, Seyed Amir, Margetis, Joe, Al-Kabi, Sattar, Zhou, Yiyin, Liu, Jifeng, Sun, Greg, Soref, Richard A., Tolle, John, Li, Baohua, Mortazavi, Mansour, Yu, Shui-Qing

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