Optical properties of InGaN/GaN double quantum wells with varying well thickness von Ryu, Mee-Yi, Shim, Gyu Gwang, Yu, Phil Won, Oh, Eunsoon, Sone, Chulsoo, Nam, Okhyun, Park, Yongjo

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Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition von Cho, Hyung Koun, Lee, Jeong Yong, Kim, Ki Soo, Yang, Gye Mo, Song, Jae Ho, Yu, Phil Won

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Optical properties and recombination dynamics of InGaN/GaN multiple quantum wells with Si-doped barriers von Ryu, Mee-Yi, Yu, Phil Won, Oh, Eunsoon, Sone, Chulsoo, Nam, Okhyun, Park, Yongjo

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Effects of high potential barrier on InAs quantum dots and wetting layer von Kim, Jin Soo, Yu, Phil Won, Leem, Jae-Young, Jeon, Minhyon, Noh, Sam Kyu, Lee, Joo In, Kim, Gu Hyun, Kang, Se-Kyung, Kim, Jong Su, Kim, Song Gang

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Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy von Kim, Jin Soo, Oh, Dae Kon, Yu, Phil Won, Leem, Jae-Young, Lee, Joo In, Lee, Cheul-Ro

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Growth of Si-doped InAs quantum dots and annealing effects on size distribution von Kim, Jin Soo, Yu, Phil Won, Leem, Jae-Young, Lee, Joo In, Noh, Sam Kyu, Kim, Jong Su, Kim, Gu Hyun, Kang, Se-Kyung, Ban, Seung Il, Kim, Song Gang, Jang, Yu Dong, Lee, Uk Hyun, Yim, Jung Soon, Lee, Donghan

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Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells von Ryu, Mee-Yi, Yu, Phil Won, Shin, Eun-joo, Lee, Joo In, Yu, Sung Kyu, Oh, Eunsoon, Nam, Ok Hyun, Sone, Chul Soo, Park, Yong Jo

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Persistent photoluminescence quenching of 0.68-eV emission in undoped semi-insulating GaAS von Yu, Phil Won

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Radiative recombination in melt-grown and Cd-implanted CuInSe2 von Yu, Phil Won

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Photoluminescence identification of ∼77-meV deep acceptor in GaAs von Yu, Phil Won, Reynolds, D. C.

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Height-controlled InAs quantum dots by using a thin InGaAs layer von Kim, Jin Soo, Yu, Phil Won, Lee, Joo In, Kim, Jong Su, Kim, Song Gang, Leem, Jae-Young, Jeon, Minhyon

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Evidence of intrinsic double acceptor in GaAs von Yu, P W, Mitchel, W C, Mier, M G, Li, S S, Wang, W L

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Deep photoluminescence band related to oxygen in gallium arsenide von Yu, P W, Walters, D C

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Effect of oxygen in photoluminescence from chromium-doped semi-insulating GaAs von Won Yu, Phil

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Distribution Coefficient of Ag in Bismuth Crystal von Chung, Choong Hyun, Yu, Phil Won, Lee, Kang Mook

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Iron in heat-treated gallium arsenide von Yu, Phil Won

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Deep emission centers in Ge-implanted GaAs von Yu, Phil Won

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Electrical properties of CuGaS2 single crystals von Yu, Phil Won, Downing, D. L., Park, Y. S.

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Cadmium−diffused CuInSe2 junction diode and photovoltaic detection von Yu, Phil Won, Faile, S. P., Park, Y. S.

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Sharp-line and broad-band emission in AgGaS2 crystals von Yu, Phil Won, Park, Y. S.

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