Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure von Shalygin, V. A., Moldavskaya, M. D., Vinnichenko, M. Ya, Maremyanin, K. V., Artemyev, A. A., Panevin, V. Yu, Vorobjev, L. E., Firsov, D. A., Korotyeyev, V. V., Sakharov, A. V., Zavarin, E. E., Arteev, D. S., Lundin, W. V., Tsatsulnikov, A. F., Suihkonen, S., Kauppinen, C.

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Impurity-assisted terahertz photoluminescence in compensated quantum wells von Makhov, I. S., Panevin, V. Yu, Firsov, D. A., Vorobjev, L. E., Klimko, G. V.

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Near-infrared optical absorption in GaN/AlN quantum wells grown by molecular-beam epitaxy von Vinnichenko, M Ya, Fedorov, A D, Kharin, N Yu, Panevin, V Yu, Firsov, D A, Nechaev, D V, Ivanov, S V, Jmerik, V N

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Acceptor-related terahertz and infrared photoconductivity in p-type GaAs/AlGaAs quantum wells von Vinnichenko, M Ya, Makhov, I S, Panevin, V Yu, Kharin, N Yu, Vorobjev, L E, Sorokin, S V, Sedova, I V, Firsov, D A

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Experimental study of surface plasmon-phonon polaritons in GaAs-based microstructures von Galimov, A I, Shalygin, V A, Moldavskaya, M D, Panevin, V Yu, Melentyev, G A, Artemyev, A A, Firsov, D A, Vorobjev, L E, Klimko, G V, Usikova, A A, Komissarova, T A, Sedova, I V, Ivanov, S V

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Impurity-assisted terahertz photoluminescence in quantum wells under conditions of interband stimulated emission von Makhov, I S, Panevin, V Yu, Firsov, D A, Vorobjev, L E, Sofronov, A N, Vinnichenko, M Ya, Maleev, N A, Vasil'ev, A P

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Polarization anisotropy of electroluminescence in indium antimonide von Makhov, I S, Panevin, V Yu, Firsov, D A, Vorobjev, L E, Vinnichenko, M Ya

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Excitation and decay of surface plasmon polaritons in n-GaN von Shalygin, V A, Melentev, G A, Vorobjev, L E, Panevin, V Yu, Firsov, D A, Korotyeyev, V V, Lyaschuk, Yu M, Kochelap, V A, Suihkonen, S

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Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials von Vinnichenko, M Ya, Makhov, I S, Panevin, V Yu, Selivanov, A V, Firsov, D A, Vorobjev, L E, Pikhtin, N A, Bakhvalov, K V, Shterengas, L, Belenky, G, Kipshidze, G

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Mid-infrared light absorption by photo-excited charge carriers in Ge/Si quantum dots von Vorobjev, L E, Firsov, D A, Panevin, V Yu, Sofronov, A N, Balagula, R M, Tonkikh, A A

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Mid-infrared photoluminescence from structures with InAs GaSb type II quantum wells von Selivanov, A V, Makhov, I S, Panevin, V Yu, Sofronov, A N, Firsov, D A, Vorobjev, L E, Shterengas, L.

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Dynamics of mid-infrared light absorption related to photoexcited charge carriers in Ge Si quantum dots von Kirilenko, O I, Balagula, R M, Sofronov, A N, Panevin, V Yu, Vorobjev, L E, Firsov, D A, Tonkikh, A A

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Terahertz reflection and emission associated with nonequilibrium surface plasmon polaritons in n -GaN von Melentyev, G A, Shalygin, V A, Moldavskaya, M D, Panevin, V Yu, Vorobjev, L E, Firsov, D A, Nykänen, H, Riuttanen, L, Svensk, O, Suihkonen, S

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Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation von Melentev, G. A., Shalygin, V. A., Vorobjev, L. E., Panevin, V. Yu, Firsov, D. A., Riuttanen, L., Suihkonen, S., Korotyeyev, V. V., Lyaschuk, Yu. M., Kochelap, V. A., Poroshin, V. N.

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Intersubband light absorption in tunnel-coupled GaAs/AlGaAs quantum wells for electrooptic studies von Rybalko, D A, Vinnichenko, M Ya, Vorobjev, L E, Firsov, D A, Balagula, R M, Panevin, V Yu, Kulagina, M M, Vasil'iev, A P

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Far- and near-infrared photoluminescence from n-GaAs/AlGaAs multiple quantum wells von Vorobjev, L E, Firsov, D A, Panevin, V Yu, Sofronov, A N, Balagula, R M, Makhov, I S, Vasil'ev, A P

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Photoinduced absorption and photoconductivity of Ge/Si quantum dots in mid-infrared range under interband excitation von Balagula, R M, Sofronov, A N, Panevin, V Yu, Firsov, D A, Vorobjev, L E, Tonkikh, A A, Werner, P

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Features of Single-Mode Emission in 7.5–8.0 μm Range Quantum-Cascade Lasers with a Short Cavity Length von Babichev, A. V., Kolodeznyi, E. S., Gladyshev, A. G., Denisov, D. V., Kharin, N. Yu, Petruk, A. D., Panevin, V. Yu, Slipchenko, S. O., Lyutetskii, A. V., Karachinsky, L. Ya, Novikov, I. I., Pikhtin, N. A., Egorov, A. Yu

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Interaction of surface plasmon-phonon polaritons with terahertz radiation in heavily doped GaAs epilayers von Shalygin, V A, Moldavskaya, M D, Panevin, V Yu, Galimov, A I, Melentev, G A, Artemyev, A A, Firsov, D A, Vorobjev, L E, Klimko, G V, Usikova, A A, Komissarova, T A, Sedova, I V, Ivanov, S V

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Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells von Vinnichenko, M. Ya, Makhov, I. S., Kharin, N. Yu, Graf, S. V., Panevin, V. Yu, Sedova, I. V., Sorokin, S. V., Firsov, D. A.

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