Resorufin as a probe for the dynamics of solvation by hydrogen bonding von Yu, Jongwan, Berg, Mark

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Limitations on measuring solvent motion with ultrafast transient hole burning von TAI JONG KANG, JONGWAN YU, BERG, M

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Subpicosecond relaxation of solvent perturbations of nonpolar electronic states measured by transient hole burning von JONGWAN YU, TAI JONG KANG, BERG, M

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Solvent-electronic state interactions measured from the glassy to the liquid state. I. Ultrafast transient and permanent hole burning in glycerol von JONGWAN YU, BERG, M

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Rapid solvation of a nonpolar solute measured by ultrafast transient holeburning von Jong Kang, Tai, Yu, Jongwan, Berg, Mark

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Development of Femtosecond Stimulated Raman Spectroscopy: Stimulated Raman Gain via Elimination of Cross Phase Modulation von 진승민, Young Jong Lee, 유종완, 김성근

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Molecular lens of the nonresonant dipole force von Suk Zhao B, Sung Chung H, Cho, K, Hyup Lee S, Hwang, S, Yu, J, Ahn, YH, Sohn, JY, Kim, DS, Kyung Kang W, Chung, DS

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Solvent-electronic state interactions measured from the glassy to the liquid state. II. Fluorescence line narrowing spectroscopy in glycerol von Yu, Jongwan, Earvolino, Patrick, Berg, Mark

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Study on the Changes in the Intermolecular Interactions of a Rod−Coil Liquid Crystalline Oligomer Using Raman Spectroscopy von Yu, Soo-Chang, Choi, Yonggak, Yu, Keunok Han, Yu, Jongwan, Choi, Hosoeb, Kim, Dong Hee, Lee, Myongsoo

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Local anisotropy and structural and phonon dynamics of permanganate (MnO4-) in glassy and liquid lithium chloride hexahydrate by ultrafast transient hole burning von Yu, Jongwan, Berg, Mark

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Solvent-electronic state interactions measured from the glassy to the liquid state. III. Fluorescence line narrowing spectroscopy in glycerol von JONGWAN YU, EARVOLINO, P, BERG, M

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Local anisotropy and structural and phonon dynamics of MnO4- in glassy and liquid LiCl.6H2O von JONGWAN YU, BERG, M

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Solvent Dynamics by Transient Holeburning: Nonpolar Versus Polar Solutes von Kang, Tai Jong, Yu, Jongwan, Berg, M.

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Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes von Yu, Eunseon, Lee, Won-Jun, Jung, Jongwan, Cho, Seongjae

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Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices von Ali, Asif, Abbas, Yawar, Abbas, Haider, Jeon, Yu-Rim, Hussain, Sajjad, Naqvi, Bilal Abbas, Choi, Changhwan, Jung, Jongwan

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Process simulation and construction parameters optimization of shield side crossing bridge pile foundation in soft soil stratum von Rangang, Yu, Huijun, Feng

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Implementation method of multi-terminal DC control system von Yi, Liu, Hao-Ran, Huang, Jun-Wen, Zhou, Hong-Guang, Guo, Yu-Yong, Zhou

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Performance evaluation of GDC-SrMoO4-YSZ SOFCs prepared with different pore formers von Hongxin, You, Lian, Peng, Xiaojuan, Wang, Cong, Zhao, Yajun, Guan, Tao, Yu, Lijun, Xu, Abuliti

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Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime von Yu, Eunseon, Son, Baegmo, Kam, Byungmin, Joh, Yong Sang, Park, Sangjoon, Lee, Won‐Jun, Jung, Jongwan, Cho, Seongjae

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SiGe Heterojunction FinFET Towards Tera-Hertz Applications von Yu, Eunseon, Lee, Won-Jun, Jung, Jongwan, Cho, Seongjae

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