Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads von Yu, Eunseon, K, Gaurav Kumar, Saxena, Utkarsh, Roy, Kaushik

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Multi-Level Neuromorphic Devices Built on Emerging Ferroic Materials: A Review von Wang, Cheng, Agrawal, Amogh, Yu, Eunseon, Roy, Kaushik

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Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes von Yu, Eunseon, Lee, Won-Jun, Jung, Jongwan, Cho, Seongjae

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Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel von Yu, Eunseon, Cho, Seongjae

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A Quantum-Well Charge-Trap Synaptic Transistor With Highly Linear Weight Tunability von Yu, Eunseon, Cho, Seongjae, Roy, Kaushik, Park, Byung-Gook

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Processing and Characterization of Ultra-thin Poly-crystalline Silicon for Memory and Logic Applications von Yu, Eunseon, Kim, Youngmin, Lee, Junsoo, Cho, Yongbeom, Lee, Won Jae, Cho, Seongjae

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Design and Characterization of Semi-Floating-Gate Synaptic Transistor von Cho, Yongbeom, Lee, Jae Yoon, Yu, Eunseon, Han, Jae-Hee, Baek, Myung-Hyun, Cho, Seongjae, Park, Byung-Gook

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Characterization and Optimization of Inverted-T FinFET Under Nanoscale Dimensions von Yu, Eunseon, Heo, Keun, Cho, Seongjae

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Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime von Yu, Eunseon, Son, Baegmo, Kam, Byungmin, Joh, Yong Sang, Park, Sangjoon, Lee, Won‐Jun, Jung, Jongwan, Cho, Seongjae

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Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness von Yu, Eunseon, Lyu, Xiao, Si, Mengwei, Ye, Peide D., Roy, Kaushik

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A Band-Engineered One-Transistor DRAM With Improved Data Retention and Power Efficiency von Yu, Eunseon, Cho, Seongjae, Shin, Hyungsoon, Park, Byung-Gook

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Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime von Yu, Eunseon, Son, Baegmo, Kam, Byungmin, Joh, Yong Sang, Park, Sangjoon, Lee, Won-Jun, Jung, Jongwan, Cho, Seongjae

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Ferroelectric FET Based Coupled-Oscillatory Network for Edge Detection von Yu, Eunseon, Agrawal, Amogh, Zheng, Dongqi, Si, Mengwei, Koo, Minsuk, Ye, Peide D., Gupta, Sumeet Kumar, Roy, Kaushik

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Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect von Seo, Jae Hwa, Yoon, Young Jun, Yu, Eunseon, Sun, Wookyung, Shin, Hyungsoon, Kang, In Man, Lee, Jong-Ho, Cho, Seongjae

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A Silicon-Compatible Synaptic Transistor Capable of Multiple Synaptic Weights toward Energy-Efficient Neuromorphic Systems von Yu, Eunseon, Cho, Seongjae, Park, Byung-Gook

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An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures von Yu, Eunseon, Cho, Seongjae, Park, Byung-Gook

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Pd/IGZO/p+‑Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency von Kim, Donguk, Jang, Jun Tae, Yu, Eunseon, Park, Jingyu, Min, Jungi, Kim, Dong Myong, Choi, Sung-Jin, Mo, Hyun-Sun, Cho, Seongjae, Roy, Kaushik, Kim, Dae Hwan

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SiGe Heterojunction FinFET Towards Tera-Hertz Applications von Yu, Eunseon, Lee, Won-Jun, Jung, Jongwan, Cho, Seongjae

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Fabrication method of semiconductor device having SIGe shell channel and semiconductor device fabricated by the same von Yu, EunSeon, Cho, Seongjae

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Intelligent semiconductor device having SiGe quantum well von Yu, EunSeon, Cho, Seongjae

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