Organic wrinkles for energy efficient organic light emitting diodes von Moon, Jaehyun, Kim, Eunhye, Park, Seung Koo, Lee, Keunsoo, Shin, Jin-Wook, Cho, Doo-Hee, Lee, Jonghee, Joo, Chul Woong, Cho, Nam Sung, Han, Jun-Han, Yu, Byoung-Gon, Yoo, Seunghyup, Lee, Jeong-Ik

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Direct formation of random wrinkle on emission surface for improved light out coupling and stable angular spectrum of white organic light emitting diodes von Kang, Sohyeon, Joo, Chul Woong, Ha, Byeong-Hak, Kim, Jooyeon, Lee, Jonghee, Yu, Byoung-Gon, Cho, Nam Sung, Noh, Jiwhan, Moon, Jaehyun

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A Low Power Phase-Change Random Access Memory using a Data-Comparison Write Scheme von Yang, Byung-Do, Lee, Jae-Eun, Kim, Jang-Su, Cho, Junghyun, Lee, Seung-Yun, Yu, Byoung-Gon

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The effect of antimony-doping on Ge2Sb2Te5, a phase change material von CHOI, Kyu-Jeong, YOON, Sung-Min, LEE, Nam-Yeal, LEE, Seung-Yun, PARK, Young-Sam, YU, Byoung-Gon, RYU, Sang-Ouk

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Flexible integrated OLED substrates prepared by printing and plating process von Cho, Doo-Hee, Kwon, O Eun, Park, Young-Sam, Yu, Byoung Gon, Lee, Jonghee, Moon, Jaehyun, Cho, Hyunsu, Lee, Hyunkoo, Cho, Nam Sung

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Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate von Yoon, Sung-Min, Jung, Soon-Won, Yang, Shinhyuk, Ko Park, Sang-Hee, Yu, Byoung-Gon, Ishiwara, Hiroshi

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Investigation of the effect of calcination temperature on HMDS-treated ordered mesoporous silica film von Ha, Tae-Jung, Park, Hyung-Ho, Jung, Sang-Bae, Ryu, Hojun, Yu, Byoung-Gon

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Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film von Cho, Chae-Ryong, Lee, Won-Jae, Yu, Byoung-Gon, Kim, Bo-Woo

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Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications von Yoon, Sung-Min, Jung, Soon-Won, Yang, Shin-Hyuk, Kang, Seung-Youl, Hwang, Chi-Sun, Yu, Byoung-Gon

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Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications von Lee, Soo-Jin, Yoon, Soon-Gil, Choi, Kyu-Jeong, Ryu, Sang-Ouk, Yoon, Sung-Min, Lee, Nam-Yeal, Yu, Byoung-Gon

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Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films von YOON, Sung-Min, CHOI, Kyu-Jeong, LEE, Nam-Yeal, LEE, Seung-Yun, PARK, Young-Sam, YU, Byoung-Gon

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Top-gate ferroelectric thin-film-transistors with P(VDF-TrFE) copolymer von Jung, Soon-Won, Lee, Jong-Keun, Kim, Young Soon, Yoon, Sung-Min, You, In-Kyu, Yu, Byoung-Gon, Noh, Yong-Young

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Effect of high temperature post-annealing of La0.7Sr0.3MnO3 films deposited by radio frequency magnetron sputtering on SiO2/Si substrates heated at low temperature von SUN GYU CHOI, SIVASANKAR REDDY, A, YU, Byoung-Gon, WOO SEOK YANG, SANG HOON CHEON, PARK, Hyung-Ho

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New High-k SrTa2O6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition von Chae, Byung-Gyu, Lee, Won-Jae, You, In-Kyu, Ryu, Sang-Ouk, Jung, Moon-Youn, Yu, Byoung-Gon

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Fabrication and electrical characterization of phase-change memory devices with nanoscale self-heating-channel structures von Yoon, Sung-Min, Jung, Soon-Won, Lee, Seung-Yun, Park, Young-Sam, Yu, Byoung-Gon

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Stress reduction during phase change in Ge2Sb2Te5 by capping Tin film von Park, Young Sam, Ryu, Sang Ouk, Choi, Kyu Jeong, Lee, Seung Yun, Yoon, Sung Min, Yu, Byoung Gon

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Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor von Shin, Woong-Chul, Ryu, Sang-Ouk, You, In-Kyu, Yu, Byoung-Gon, Lee, Won-Jae, Choi, Kyu-Jeong, Yoon, Soon-Gil

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Plasma-Enhanced Atomic Layer Deposition of SrTa[sub 2]O[sub 6] Thin Films Using Sr[Ta(OC[sub 2]H[sub 5])[sub 5](OC[sub 2]H[sub 4]OCH[sub 3])][sub 2] as Precursor von Shin, Woong-Chul, Ryu, Sang-Ouk, You, In-Kyu, Yu, Byoung-Gon, Lee, Won-Jae, Choi, Kyu-Jeong, Yoon, Soon-Gil

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SrTa2O6 THIN FILMS DEPOSITED BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION von Lee, W-J, You, I-K, Ryu, S-O, Yu, B-G, Cho, K-I, Yoon, S-G

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Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer von Yoon, Sung-Min, Yang, Shin-Hyuk, Ko Park, Sang-Hee, Jung, Soon-Won, Cho, Doo-Hee, Byun, Chun-Won, Kang, Seung-Youl, Hwang, Chi-Sun, Yu, Byoung-Gon

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