Threshold voltage and charge control considerations in double quantum wellSi/Si1−xGex p-type MOSFETs von Yousif, M.Y.A., Nur, O., Chretien, O., Fu, Y., Willander, M.

Volltext

Recent critical issues in Si/Si1−xGex/Si heterostructure FET devices von Yousif, M.Y.A., Nur, O., Willander, M.

Volltext

Recent critical issues in Si/Si 1− xGe x/Si heterostructure FET devices von Yousif, M.Y.A., Nur, O., Willander, M.

Volltext

Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction von TURAN, R, ASLAN, B, NUR, O, YOUSIF, M. Y. A, WILLANDER, M

Volltext

Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1−xGex/Si buffer layers von Yousif, M.Y.A, Nur, O, Willander, M, Patel, C.J, Hernandez, C, Campidelli, Y, Bensahel, D, Kyutt, R.N

Volltext

On the performance of in situ B-doped P + poly-Si 1−xGe x gate material for nanometer scale MOS technology von Yousif, M.Y.A, Friesel, M, Willander, M, Lundgren, P, Caymax, M

Volltext

On the performance of in situ B-doped P+ poly-Si1−xGex gate material for nanometer scale MOS technology von Yousif, M.Y.A, Friesel, M, Willander, M, Lundgren, P, Caymax, M

Volltext

Short-channel effects in Si/Si 1− xGe x retrograde double quantum well p-MOSFETs von Yousif, M.Y.A, Chretien, O, Nur, O, Willander, M

Volltext

Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si 1− xGe x/Si buffer layers von Yousif, M.Y.A, Nur, O, Willander, M, Patel, C.J, Hernandez, C, Campidelli, Y, Bensahel, D, Kyutt, R.N

Volltext

Short-channel effects in Si/Si1−xGex retrograde double quantum well p-MOSFETs von Yousif, M.Y.A, Chretien, O, Nur, O, Willander, M

Volltext

Threshold voltage and charge control considerations in double quantum wellSi/Si 1− xGe x p-type MOSFETs von Yousif, M.Y.A., Nur, O., Chretien, O., Fu, Y., Willander, M.

Volltext

Measurements and calculations of neutron leakage spectra from slabs irradiated with 9Be(d, n) 10B 2H(d, n) 3He and Pu–Be neutrons von Oláh, L., Fenyvesi, A., Jordanova, J., El-Megrab, A.M., Majdeddin, A.D., Darsono, Perez, N., Yousif, M.Y.A., Csikai, J.

Volltext

ZrO2 Gate Dielectrics Prepared by E-beam Deposition of Zr and YSZ Films and Post Annealing Processes von Johansson, M., Yousif, M.Y.A., Sareen, A., Lundgren, P., Bengtsson, S., Sodervall, U.

Volltext bestellen

HfO/sub 2/ for strained-Si and strained-SiGe MOSFETs von Yousif, M.Y.A., Johansson, M., Lundgren, P., Bengtsson, S., Sundqvist, J., Harsta, A., Radamson, H.H.

Volltext bestellen

ZrO/sub 2/ and ZrO/sub 2//Y/sub 2/O/sub 3/ gate dielectrics prepared by evaporation and annealing processes von Johansson, M., Yousif, M.Y.A., Sareen, A., Lundgren, P., Bengtsson, S., Sodervall, U.

Volltext bestellen

Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime von Yousif, M.Y.A., Willander, M., Lundgren, P., Caymax, M.

Volltext bestellen

Direct assessment of relaxation and defect propagation in different thin single Ge/Si and step-graded Si/sub 1-x//Si buffer layers for RF and microwave applications von Yousif, M.Y.A., Nur, O., Karlsteen, M., Willander, M., Patel, C.J., Hernandez, C., Campidelli, Y., Bensahel, D., Kyutti, R.N.

Volltext bestellen