Treffer 1 - 13 von 13 für Suche 'Youngseop Rah', Suchdauer: 0,56s Treffer weiter einschränken
  1. 1
    Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30nm Node

    Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30nm Node von Soon-Moon Jung, Jaehoon Jang, Wonseok Cho, Hoosung Cho, Jaehun Jeong, Youngchul Chang, Jonghyuk Kim Youngseop Rah, Yangsoo Son, Junbeom Park, Min-Sung Song, Kyoung-Hon Kim, Jm-Soo Lim, Kinam Kim


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  2. 2
    65nm high performance SRAM technology with 25F2 0.16/spl mu/m/sup 2/ S/sup 3/ (stacked single-crystal Si) SRAM cell, and stacked peripheral SSTFT for ultra high density and high speed applications

    65nm high performance SRAM technology with 25F2 0.16/spl mu/m/sup 2/ S/sup 3/ (stacked single-crystal Si) SRAM cell, and stacked peripheral SSTFT for ultra high density and high sp... von Hoon Lim, Soon-Moon Jung, Youngseop Rah, Taehong Ha, Hanbyung Park, Chulsoon Chang, Wonsuk Cho, Jaikyun Park, Byoungkeun Son, Jaehun Jeong, Hoosung Cho, Bonghyun Choi, Kinam Kim


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  3. 3
    Highly cost effective and high performance 65nm S/sup 3/ (stacked single-crystal Si) SRAM technology with 25F/sup 2/, 0.16um/sup 2/ cell and doubly stacked SSTFT cell transistors for ultra high density and high speed applications

    Highly cost effective and high performance 65nm S/sup 3/ (stacked single-crystal Si) SRAM technology with 25F/sup 2/, 0.16um/sup 2/ cell and doubly stacked SSTFT cell transistors f... von Soon-Moon Jung, Youngseop Rah, Taehong Ha, Hanbyung Park, Chulsoon Chang, Seungchul Lee, Jongho Yun, Wonsuk Cho, Hoon Lim, Jaikyun Park, Jaehun Jeong, Byoungkeun Son, Jaehoon Jang, Bonghyun Choi, Hoosung Cho, Kinam Kim


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  4. 4
    Semiconductor devices and methods of fabricating the same

    Semiconductor devices and methods of fabricating the same von PARK YOONMOON, YOON YOUNG-BAE, RAH YOUNGSEOP, KIM KEONSOO, KIM JONG-HYUK

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  5. 5
    Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof

    Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof von Kim, Jonghyuk, Kim, Han-Soo, Rah, YoungSeop, Song, Min-sung, Chul, Jang Young, Jung, Soon-Moon, Cho, Wonseok

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  6. 6
    Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof

    Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof von RAH YOUNGSEOP, CHO WONSEOK, KIM HAN-SOO, KIM JONGHYUK, CHUL JANG YOUNG, SONG MIN-SUNG, JUNG SOON-MOON

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  7. 7
    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME von PARK YOONMOON, YOON YOUNG-BAE, RAH YOUNGSEOP, KIM KEONSOO, KIM JONG-HYUK

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  8. 8
    MULTIPLE-LAYER NON-VOLATILE MEMORY DEVICES, MEMORY SYSTEMS EMPLOYING SUCH DEVICES, AND METHODS OF FABRICATION THEREOF

    MULTIPLE-LAYER NON-VOLATILE MEMORY DEVICES, MEMORY SYSTEMS EMPLOYING SUCH DEVICES, AND METHODS OF FABRICATION THEREOF von RAH YOUNGSEOP, CHO WONSEOK, KIM HAN-SOO, KIM JONGHYUK, CHUL JANG YOUNG, SONG MIN-SUNG, JUNG SOON-MOON

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  9. 9
    Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof

    Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof von RAH YOUNGSEOP, CHO WONSEOK, KIM HAN-SOO, KIM JONGHYUK, CHUL JANG YOUNG, SONG MIN-SUNG, JUNG SOON-MOON

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  10. 10
    Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof

    Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof von Kim, Jonghyuk, Kim, Han-Soo, Rah, YoungSeop, Song, Min-sung, Chul, Jang Young, Jung, Soon-Moon, Cho, Wonseok

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  11. 11
    Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof

    Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof von RAH YOUNGSEOP, CHO WONSEOK, KIM HAN-SOO, KIM JONGHYUK, CHUL JANG YOUNG, SONG MIN-SUNG, JUNG SOON-MOON

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  12. 12
    A novel 0.79μm2 SRAM cell by KrF lithography and high performance 90nm CMOS technology for ultra high speed SRAM

    A novel 0.79μm2 SRAM cell by KrF lithography and high performance 90nm CMOS technology for ultra high speed SRAM von JUNG, Soon-Moon, KWON, Hyungshin, LYU, Gyuho, PARK, Joonbum, CHANG, Chulsoon, JANG, Youngchul, PARK, Donggun, KIM, Kinam, MOON YONG LEE, JEONG, Jaehun, CHO, Wonseok, KIM, Sungbong, LIM, Hoon, KOH, Kwangok, RAH, Youngseop, PARK, Jaekyun, KANG, Heesoo

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  13. 13
    A novel 0.79 /spl mu/m/sup 2/ SRAM cell by KrF lithography and high performance 90 nm CMOS technology for ultra high speed SRAM

    A novel 0.79 /spl mu/m/sup 2/ SRAM cell by KrF lithography and high performance 90 nm CMOS technology for ultra high speed SRAM von Soon-Moon Jung, Hyungshin Kwon, Jaehun Jeong, Wonseok Cho, Sungbong Kim, Hoon Lim, Kwangok Koh, Youngseop Rah, Jaekyun Park, Heesoo Kang, Gyuho Lyu, Joonbum Park, Chulsoon Chang, Youngchul Jang, Donggun Park, Kinam Kim, Moon Yong Lee

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