Cyclotron production of 225Ac from an electroplated 226Ra target von Nagatsu, Kotaro, Suzuki, Hisashi, Fukada, Masami, Ito, Taku, Ichinose, Jun, Honda, Yoshio, Minegishi, Katsuyuki, Higashi, Tatsuya, Zhang, Ming-Rong

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Anisotropic hole transport along [0001] and [11 2 ¯0] direction in p-doped (10 1 ¯0) GaN von Lin, Yingying, Wang, Jia, Pristovsek, Markus, Honda, Yoshio, Amano, Hiroshi

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Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current von Usami, Shigeyoshi, Mayama, Norihito, Toda, Kazuya, Tanaka, Atsushi, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate von Usami, Shigeyoshi, Ando, Yuto, Tanaka, Atsushi, Nagamatsu, Kentaro, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Sugawara, Yoshihiro, Yao, Yong-Zhao, Ishikawa, Yukari

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Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes von Sang, Liwen, Ren, Bing, Sumiya, Masatomo, Liao, Meiyong, Koide, Yasuo, Tanaka, Atsushi, Cho, Yujin, Harada, Yoshitomo, Nabatame, Toshihide, Sekiguchi, Takashi, Usami, Shigeyoshi, Honda, Yoshio, Amano, Hiroshi

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Stress relaxation of AlGaN on nonpolar m-plane GaN substrate von Lin, Yingying, Sena, Hadi, Frentrup, Martin, Pristovsek, Markus, Honda, Yoshio, Amano, Hiroshi

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Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces von Ando, Yuto, Nagamatsu, Kentaro, Deki, Manato, Taoka, Noriyuki, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Nakamura, Tohru, Amano, Hiroshi

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Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy von Ohnishi, Kazuki, Kawasaki, Seiya, Fujimoto, Naoki, Nitta, Shugo, Watanabe, Hirotaka, Honda, Yoshio, Amano, Hiroshi

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Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy von Ohnishi, Kazuki, Fujimoto, Naoki, Nitta, Shugo, Watanabe, Hirotaka, Lu, Shun, Deki, Manato, Honda, Yoshio, Amano, Hiroshi

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Smart-cut-like laser slicing of GaN substrate using its own nitrogen von Tanaka, Atsushi, Sugiura, Ryuji, Kawaguchi, Daisuke, Yui, Toshiki, Wani, Yotaro, Aratani, Tomomi, Watanabe, Hirotaka, Sena, Hadi, Honda, Yoshio, Igasaki, Yasunori, Amano, Hiroshi

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Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces von Ando, Yuto, Nagamatsu, Kentaro, Deki, Manato, Taoka, Noriyuki, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Nakamura, Tohru, Amano, Hiroshi

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Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg von Lu, Shun, Deki, Manato, Wang, Jia, Ohnishi, Kazuki, Ando, Yuto, Kumabe, Takeru, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic von Lu, Shun, Deki, Manato, Kumabe, Takeru, Wang, Jia, Ohnishi, Kazuki, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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Effective neutron detection using vertical-type BGaN diodes von Nakano, Takayuki, Mochizuki, Ken, Arikawa, Takuya, Nakagawa, Hisaya, Usami, Shigeyoshi, Honda, Yoshio, Amano, Hiroshi, Vogt, Adrian, Schütt, Sebastian, Fiederle, Michael, Kojima, Kazunobu, Chichibu, Shigefusa F., Inoue, Yoku, Aoki, Toru

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Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes von Kushimoto, Maki, Zhang, Ziyi, Yoshikawa, Akira, Aoto, Koji, Honda, Yoshio, Sasaoka, Chiaki, Schowalter, Leo J., Amano, Hiroshi

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Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode von Sato, Daiki, Honda, Anna, Koizumi, Atsushi, Nishitani, Tomohiro, Honda, Yoshio, Amano, Hiroshi

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Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers von Matsukura, Yusuke, Inazu, Tetsuhiko, Pernot, Cyril, Shibata, Naoki, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Amano, Hiroshi

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Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment von Kwon, Woong, Itoh, Yuta, Tanaka, Atsushi, Watanabe, Hirotaka, Honda, Yoshio, Amano, Hiroshi

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Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering von Kobayashi, Atsushi, Honda, Yoshio, Maeda, Takuya, Okuda, Tomoya, Ueno, Kohei, Fujioka, Hiroshi

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High In content nitride sub-micrometer platelet arrays for long wavelength optical applications von Cai, Wentao, Furusawa, Yuta, Wang, Jia, Park, Jeong-Hwan, Liao, Yaqiang, Cheong, Hea-Jeong, Nitta, Shugo, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi

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