State-of-the-art technologies of gallium oxide power devices von Higashiwaki, Masataka, Kuramata, Akito, Murakami, Hisashi, Kumagai, Yoshinao

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1-kV vertical Ga2O3 field-plated Schottky barrier diodes von Konishi, Keita, Goto, Ken, Murakami, Hisashi, Kumagai, Yoshinao, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka

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Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor p... von Higashiwaki, Masataka, Konishi, Keita, Sasaki, Kohei, Goto, Ken, Nomura, Kazushiro, Thieu, Quang Tu, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Koukitu, Akinori, Kuramata, Akito, Yamakoshi, Shigenobu

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Current status of Ga2O3 power devices von Higashiwaki, Masataka, Murakami, Hisashi, Kumagai, Yoshinao, Kuramata, Akito

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Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs von Wong, Man Hoi, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka

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Acceptor doping of β-Ga2O3 by Mg and N ion implantations von Wong, Man Hoi, Lin, Chia-Hung, Kuramata, Akito, Yamakoshi, Shigenobu, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka

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Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0 0 0 1) substrates von Nakahata, Hidetoshi, Togashi, Rie, Goto, Ken, Monemar, Bo, Kumagai, Yoshinao

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Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching von Togashi, Rie, Kasaba, Ryo, Goto, Ken, Kumagai, Yoshinao, Kikuchi, Akihiko

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN von Gaddy, Benjamin E., Bryan, Zachary, Bryan, Isaac, Xie, Jinqiao, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Kirste, Ronny, Sitar, Zlatko, Collazo, Ramón, Irving, Douglas L.

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Heterostructure formation of group-III sesquioxides via cation-exchange reactions with metal chloride gases von Goto, Ken, Ueno, Tomo, Kumagai, Yoshinao

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Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy von Nagashima, Toru, Ishikawa, Reiko, Hitomi, Tatsuya, Yamamoto, Reo, Kotani, Junji, Kumagai, Yoshinao

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On the origin of the 265 nm absorption band in AlN bulk crystals von Collazo, Ramón, Xie, Jinqiao, Gaddy, Benjamin E., Bryan, Zachary, Kirste, Ronny, Hoffmann, Marc, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Irving, Douglas L., Sitar, Zlatko

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Characterization of trap states in buried nitrogen-implanted β-Ga2O3 von Mishra, Abhishek, Moule, Taylor, Uren, Michael J, Wong, Man Hoi, Goto, Ken, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka, Kuball, Martin

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The influence of point defects on the thermal conductivity of AlN crystals von Rounds, Robert, Sarkar, Biplab, Alden, Dorian, Guo, Qiang, Klump, Andrew, Hartmann, Carsten, Nagashima, Toru, Kirste, Ronny, Franke, Alexander, Bickermann, Matthias, Kumagai, Yoshinao, Sitar, Zlatko, Collazo, Ramón

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Thermal conductivity of single-crystalline AlN von Rounds, Robert, Sarkar, Biplab, Klump, Andrew, Hartmann, Carsten, Nagashima, Toru, Kirste, Ronny, Franke, Alexander, Bickermann, Matthias, Kumagai, Yoshinao, Sitar, Zlatko, Collazo, Ramón

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN von Gaddy, Benjamin E., Bryan, Zachary, Bryan, Isaac, Kirste, Ronny, Xie, Jinqiao, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Sitar, Zlatko, Collazo, Ramón, Irving, Douglas L.

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Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth von Inatomi, Yuya, Kangawa, Yoshihiro, Ito, Tomonori, Suski, Tadeusz, Kumagai, Yoshinao, Kakimoto, Koichi, Koukitu, Akinori

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Enhancement-Mode \beta -Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker von Wong, Man Hoi, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka

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Recent progress in Ga2O3 power devices von Higashiwaki, Masataka, Sasaki, Kohei, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu

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Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy von Takekawa, Nao, Hayashida, Naoto, Ohzeki, Daisuke, Yamaguchi, Akira, Murakami, Hisashi, Kumagai, Yoshinao, Matsumoto, Koh, Koukitu, Akinori

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