Competition between Kardar–Parisi–Zhang and Berezinskii–Kosterlitz–Thouless kinetic roughening on (001) singular surface during steady crystal growth von Akutsu, Noriko, Kangawa, Yoshihiro

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Self-formed compositional superlattices triggered by cation orderings in m-plane Al1−xInxN on GaN von Chichibu, Shigefusa F., Shima, Kohei, Kojima, Kazunobu, Kangawa, Yoshihiro

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Bandgap Change in Short‐Period InN/AlN Superlattices Induced by Lattice Strain von Kawamura, Takahiro, Basaki, Kouhei, Korei, Akito, Akiyama, Toru, Kangawa, Yoshihiro

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Winners of 2023 JACG Awards von Kangawa, Yoshihiro

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Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio -Based Approach von Kangawa, Yoshihiro, Akiyama, Toru, Ito, Tomonori, Shiraishi, Kenji, Nakayama, Takashi

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Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE von Kangawa, Yoshihiro, Kusaba, Akira, Kempisty, Paweł, Shiraishi, Kenji, Nitta, Shugo, Amano, Hiroshi

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Winners of 2022 JACG Awards von Kangawa, Yoshihiro

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Polarization doping—Ab initio verification of the concept: Charge conservation and nonlocality von Ahmad, Ashfaq, Strak, Pawel, Kempisty, Pawel, Sakowski, Konrad, Piechota, Jacek, Kangawa, Yoshihiro, Grzegory, Izabella, Leszczynski, Michal, Zytkiewicz, Zbigniew R., Muziol, Grzegorz, Monroy, Eva, Kaminska, Agata, Krukowski, Stanislaw

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Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth von Inatomi, Yuya, Kangawa, Yoshihiro, Ito, Tomonori, Suski, Tadeusz, Kumagai, Yoshinao, Kakimoto, Koichi, Koukitu, Akinori

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Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at the GaN(0001) surface von Kempisty, Pawel, Strąk, Paweł, Sakowski, Konrad, Kangawa, Yoshihiro, Krukowski, Stanisław

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Theoretical study on the effect of H2 and NH3 on trimethylgallium decomposition process in GaN MOVPE von Sakakibara, Soma, Chokawa, Kenta, Araidai, Masaaki, Kusaba, Akira, Kangawa, Yoshihiro, Shiraishi, Kenji

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First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy von Bui, Kieu My, Iwata, Jun-Ichi, Kangawa, Yoshihiro, Shiraishi, Kenji, Shigeta, Yasuteru, Oshiyama, Atsushi

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Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy von Sekiguchi, Kazuki, Shirakawa, Hiroki, Chokawa, Kenta, Araidai, Masaaki, Kangawa, Yoshihiro, Kakimoto, Koichi, Shiraishi, Kenji

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Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy von Sekiguchi, Kazuki, Shirakawa, Hiroki, Chokawa, Kenta, Araidai, Masaaki, Kangawa, Yoshihiro, Kakimoto, Koichi, Shiraishi, Kenji

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Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO von Kimura, Tomoya, Ohnishi, Kazuki, Amano, Yuki, Fujimoto, Naoki, Araidai, Masaaki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Kangawa, Yoshihiro, Shiraishi, Kenji

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Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy von Inatomi, Yuya, Kangawa, Yoshihiro, Kakimoto, Koichi, Koukitu, Akinori

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CH₄ Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films von Kusaba, Akira, Li, Guanchen, Kempisty, Pawel, von Spakovsky, Michael R, Kangawa, Yoshihiro

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Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics von Kusaba, Akira, Li, Guanchen, von Spakovsky, Michael R, Kangawa, Yoshihiro, Kakimoto, Koichi

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Epitaxial Growth of III-Nitride Compounds: Computational Approach von Matsuoka, Takashi, Kangawa, Yoshihiro

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Thermodynamic analysis of (0001) and GaN metalorganic vapor phase epitaxy von Kusaba, Akira, Kangawa, Yoshihiro, Kempisty, Pawel, Valencia, Hubert, Shiraishi, Kenji, Kumagai, Yoshinao, Kakimoto, Koichi, Koukitu, Akinori

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