GaN substrates having a low dislocation density and a small off-angle variation prepared by hydride vapor phase epitaxy and maskless-3D von Yoshida, Takehiro, Shibata, Masatomo

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Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy von Kanegae, Kazutaka, Fujikura, Hajime, Otoki, Yohei, Konno, Taichiro, Yoshida, Takehiro, Horita, Masahiro, Kimoto, Tsunenobu, Suda, Jun

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An economic value for ecosystem-based disaster risk reduction using paddy fields in the kasumitei open levee system von Yamada, Yumi, Taki, Kentaro, Yoshida, Takehiro, Ichinose, Tomohiro

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Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates von Shiojima, Kenji, Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Mishima, Tomoyoshi

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Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride von Horikiri, Fumimasa, Ohta, Hiroshi, Asai, Naomi, Narita, Yoshinobu, Yoshida, Takehiro, Mishima, Tomoyoshi

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Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals von Kojima, Kazunobu, Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Fujikura, Hajime, Chichibu, Shigefusa F.

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Growth of InGaN films on hardness-controlled bulk GaN substrates von Sumiya, Masatomo, Fukuda, Kiyotaka, Fujikura, Hajime, Konno, Taichiro, Suzuki, Takayuki, Fujimoto, Tetsuji, Yoshida, Takehiro, Ueda, Shigenori, Watanabe, Kenji, Ohnishi, Tsuyoshi, Honda, Tohru

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Non-polar GaN thin films deposition on glass substrate at low temperatures by conventional RF sputtering von Simanullang, Marolop, Wang, Zehua, Kawakami, Nao, Ogata, Ryu, Yoshida, Takehiro, Sugiyama, Mutsumi

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Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy von Oshima, Yuichi, Yoshida, Takehiro, Watanabe, Kazutoshi, Mishima, Tomoyoshi

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Impact of damage-free wet etching process on fabrication of high breakdown voltage GaN p-n junction diodes von Asai, Naomi, Ohta, Hiroshi, Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Mishima, Tomoyoshi

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Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples von Matsuda, Ryo, Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Fukuhara, Noboru, Mishima, Tomoyoshi, Shiojima, Kenji

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Wafer-level nondestructive inspection of substrate off-angle and net donor concentration of the n−-drift layer in vertical GaN-on-GaN Schottky diodes von Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Kitamura, Toshio, Ohta, Hiroshi, Nakamura, Tohru, Mishima, Tomoyoshi

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Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy von Fujikura, Hajime, Hayashi, Kentaro, Horikiri, Fumimasa, Narita, Yoshinobu, Konno, Taichiro, Yoshida, Takehiro, Ohta, Hiroshi, Mishima, Tomoyoshi

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Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes von Hayashi, Kentaro, Ohta, Hiroshi, Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Mishima, Tomoyoshi

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Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method von Yoshida, Takehiro, Oshima, Yuichi, Eri, Takeshi, Ikeda, Ken, Yamamoto, Shunsuke, Watanabe, Kazutoshi, Shibata, Masatomo, Mishima, Tomoyoshi

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Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy von Yoshida, Takehiro, Oshima, Yuichi, Watanabe, Kazutoshi, Tsuchiya, Tadayoshi, Mishima, Tomoyoshi

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Thermal-assisted contactless photoelectrochemical etching for GaN von Horikiri, Fumimasa, Fukuhara, Noboru, Ohta, Hiroshi, Asai, Naomi, Narita, Yoshinobu, Yoshida, Takehiro, Mishima, Tomoyoshi, Toguchi, Masachika, Miwa, Kazuki, Ogami, Hiroki, Sato, Taketomo

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Improvement of deconvolution–convolution treatment of axial-divergence aberration in Bragg–Brentano geometry von Ida, Takashi, Ono, Shoki, Hattan, Daiki, Yoshida, Takehiro, Takatsu, Yoshinobu, Nomura, Katsuhiro

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Coexisting Curtobacterium Bacterium Promotes Growth of White-Rot Fungus Stereum sp von Kamei, Ichiro, Yoshida, Takehiro, Enami, Daisuke, Meguro, Sadatoshi

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Deconvolution–convolution treatment on powder diffraction data collected with CuKα X-ray and NiKβ filter von Ida, Takashi, Ono, Shoki, Hattan, Daiki, Yoshida, Takehiro, Takatsu, Yoshinobu, Nomura, Katsuhiro

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