Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process von Tan, K.H., Jia, B.W., Loke, W.K., Wicaksono, S., Yoon, S.F.

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Multi-walled carbon nanotubes for the immobilization of enzyme in glucose biosensors von Wang, S.G., Zhang, Qing, Wang, Ruili, Yoon, S.F., Ahn, J., Yang, D.J., Tian, J.Z., Li, J.Q., Zhou, Q.

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Carrier Relaxation and Modulation Response of 1.3-μm InAs-GaAs Quantum Dot Lasers von Cunzhu Tong, Cunzhu Tong, Dawei Xu, Dawei Xu, Yoon, S.F

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Effect of N incorporation on the characteristics of InSbN P–N diodes von Lim, K.P., Pham, H.T., Yoon, S.F., Tan, K.H.

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High-Temperature Continuous-Wave Single-Mode Operation of 1.3-$\mu$m p-Doped InAs–GaAs Quantum-Dot VCSELs von Xu, D.W., Yoon, S.F., Tong, C.Z., Zhao, L.J., Ding, Y., Fan, W.J.

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Ridge-width dependence on high-temperature continuous-wave operation of native oxide-confined InGaAsN triple-quantum-well lasers von Liu, C.Y., Yoon, S.F., Fan, W.J., Uddin, A., Yuan, S.

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Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate von Liang, Y.Y., Yoon, S.F., Ngo, C.Y., Tanoto, H., Chen, K.P., Loke, W.K., Fitzgerald, E.A.

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Electron field emission enhancement effects of nano-diamond films von Wang, S.G., Zhang, Qing, Yoon, S.F., Ahn, J., Zhou, Q., Wang, Q., Yang, D.J., Li, J.Q., Zhang Shanyong, Sam

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Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs von Wicaksono, S., Yoon, S.F., Tan, K.H., Cheah, W.K.

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Correlation between adhesion of diamond-like carbon film on LiTaO3 substrate and SAW velocity von JINGZE TIAN, QING ZHANG, ZHOU, Q, GRUENWALD, R, HUESGEN, M, YOON, S. F, AHN, J

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High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy von Lew, K.L., Yoon, S.F., Wang, H., Wicaksono, S., Gupta, J.A., McAlister, S.P.

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InGaAs-GaAs 980-nm stripe-geometry and circular ring ridge waveguide lasers fabricated with pulsed anodic oxidation von Liu, C.Y., Yi Qu, Shu Yuan, Wang, S.Z., Yoon, S.F.

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Highly oriented rich boron B–C–N nanotubes by bias-assisted hot filament chemical vapor deposition von Yu, J., Bai, X.D., Ahn, J., Yoon, S.F., Wang, E.G.

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Determination of nitrogen composition in GaNxAs1−x epilayer on GaAs von Fan, W.J, Yoon, S.F, Cheah, W.K, Loke, W.K, Ng, T.K, Wang, S.Z, Liu, R, Wee, A

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CHF3-O2 reactive ion etching of 4H-SiC and the role of oxygen von XIA, J. H, RUSLI, CHOY, S. F, GOPALAKRISHAN, R, TIN, C. C, YOON, S. F, AHN, J

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Study of well adherent DLC film deposited on piezoelectric LiTaO3 substrate von JINGZE TIAN, QING ZHANG, ZHOU, Q, YOON, S. F, AHN, J, WANG, S. G, LI, J. Q, YANG, D. J

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GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer von Cheah, W.K., Fan, W.J., Yoon, S.F., Zhang, D.H., Ng, B.K., Loke, W.K., Liu, R., Wee, A.T.S.

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Optical properties of nano-crystalline diamond films deposited by MPECVD von Wang, S.G., Zhang, Qing, Yoon, S.F., Ahn, J., Wang, Q., Yang, D.J., Zhou, Q., Yue, N.L.

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Fabrication of high-performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation von Liu, C.Y., Yoon, S.F., Wang, S.Z., Fan, W.J., Qu, Y., Yuan, S.

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Field emission from patterned carbon nanotube emitters produced by microwave plasma chemical vapor deposition von Yu, J, Zhang, Q, Ahn, J, Yoon, S.F, Rusli, Li, Y.J, Gan, B, Chew, K, Tan, K.H

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