NiO/Ga2O3 Vertical Rectifiers of 7 kV and 1 mm2 with 5.5 A Forward Conduction Current von Li, Jian-Sian, Wan, Hsiao-Hsuan, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Ren, Fan, Kim, Honggyu, Pearton, Stephen J.

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Structural anisotropy in Sb thin films von Adhikari, Pradip, Wijesinghe, Anuradha, Rathore, Anjali, Yoo, Timothy Jinsoo, Kim, Gyehyeon, Yeom, Sinchul, Lee, Hyoung-Taek, Mazza, Alessandro R., Sohn, Changhee, Park, Hyeong-Ryeol, Yoon, Mina, Brahlek, Matthew, Kim, Honggyu, Lee, Joon Sue

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Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers von Li, Jian-Sian, Chiang, Chao-Ching, Xia, Xinyi, Yoo, Timothy Jinsoo, Ren, Fan, Kim, Honggyu, Pearton, S. J.

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Annealing temperature dependence of band alignment of NiO/β-Ga2O3 von Xia, Xinyi, Li, Jian-Sian, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Ren, Fan, Kim, Honggyu, Pearton, S J

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Thermal stability of band offsets of NiO/GaN von Xia, Xinyi, Li, Jian-Sian, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Ren, Fan, Kim, Honggyu, Pearton, S. J.

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Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C von Xia, Xinyi, Li, Jian-Sian, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Hershkovitz, Eitan, Ren, Fan, Kim, Honggyu, Kim, Jihyun, Jeon, Dae-Woo, Park, Ji-Hyeon, Pearton, S. J.

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Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical Heterojunction Rectifiers von Li, Jian-Sian, Wan, Hsiao-Hsuan, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Yu, Meng-Hsun, Ren, Fan, Kim, Honggyu, Liao, Yu-Te, Pearton, Stephen J.

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Breakdown up to 13.5 kV in NiO/β-Ga 2 O 3 Vertical Heterojunction Rectifiers von Li, Jian-Sian, Wan, Hsiao-Hsuan, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Yu, Meng-Hsun, Ren, Fan, Kim, Honggyu, Liao, Yu-Te, Pearton, Stephen J.

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Determination of Type II Band Alignment of NiO/α-Ga 2 O 3 For Annealing Temperatures Up To 600°C von Xia, Xinyi, Li, Jian-Sian, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Hershkovitz, Eitan, Ren, Fan, Kim, Honggyu, Kim, Jihyun, Jeon, Dae-Woo, Park, Ji-Hyeon, Pearton, Stephen J

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Determination of Type II Band Alignment of NiO/α-Ga2O3 For Annealing Temperatures Up To 600°C von Xia, Xinyi, Li, Jian-Sian, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Hershkovitz, Eitan, Ren, Fan, Kim, Honggyu, Kim, Jihyun, Jeon, Dae-Woo, Park, Ji-Hyeon, Pearton, Stephen J

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E-Mode AlGaN/GaN HEMTs Using p-NiO Gates von Chiang, Chao-Ching, Wan, Hsiao-Hsuan, Li, Jian-Sian, Ren, Fan, Yoo, Timothy Jinsoo, Kim, Honggyu, Pearton, Stephen J

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Breakdown up to 12 Kv in NiO/β-Ga2O3 Vertical Heterojunction Rectifiers von Li, Jian-Sian, Wan, Hsiao-Hsuan, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Ren, Fan, Kim, Honggyu, Pearton, Stephen J

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4.7 Kv Reverse Breakdown Voltage Ultra-Thin Double-Layered NiO/β-Ga2O3 p-n Junction Rectifiers von Li, Jian-Sian, Chiang, Chao-Ching, Xia, Xinyi, Yoo, Timothy Jinsoo, Ren, Fan, Kim, Honggyu, Pearton, Stephen J

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Determination of Type II Band Alignment of NiO/α-Ga2O3 For Annealing Temperatures Up To 600°C von Xia, Xinyi, Li, Jian-Sian, Chiang, Chao-Ching, Yoo, Timothy Jinsoo, Hershkovitz, Eitan, Ren, Fan, Kim, Honggyu, Kim, Jihyun, Jeon, Dae-Woo, Park, Ji-Hyeon, Pearton, Stephen J

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Structural Anisotropy in Sb Thin Films von Adhikari, Pradip, Wijesinghe, Anuradha, Rathore, Anjali, Yoo, Timothy Jinsoo, Kim, Gyehyeon, Lee, Hyoungtaek, Yeom, Sinchul, Mazza, Alessandro R, Sohn, Changhee, Park, Hyeong-Ryeol, Yoon, Mina, Brahlek, Matthew, Kim, Honggyu, Lee, Joon Sue

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