Treffer 1 - 7 von 7 für Suche 'Yoo, Jeihwan', Suchdauer: 0,40s Treffer weiter einschränken
  1. 1
    A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth

    A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth von Youngdon Choi, Ickhyun Song, Mu-Hui Park, Hoeju Chung, Sanghoan Chang, Beakhyoung Cho, Jinyoung Kim, Younghoon Oh, Duckmin Kwon, Jung Sunwoo, Junho Shin, Yoohwan Rho, Changsoo Lee, Min Gu Kang, Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaehwan Kim, Yong-Jun Lee, Qi Wang, Sooho Cha, Sujin Ahn, Horii, Hideki, Jaewook Lee, Kisung Kim, Hansung Joo, Kwangjin Lee, Yeong-Taek Lee, Jeihwan Yoo, Jeong, G.


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  2. 2
    A 31 ns Random Cycle VCAT-Based 4F ^ DRAM With Manufacturability and Enhanced Cell Efficiency

    A 31 ns Random Cycle VCAT-Based 4F ^ DRAM With Manufacturability and Enhanced Cell Efficiency von Song, Ki-Whan, Kim, Jin-Young, Yoon, Jae-Man, Kim, Sua, Kim, Huijung, Chung, Hyun-Woo, Kim, Hyungi, Kim, Kanguk, Park, Hwan-Wook, Kang, Hyun Chul, Tak, Nam-Kyun, Park, Dukha, Kim, Woo-Seop, Lee, Yeong-Taek, Oh, Yong Chul, Jin, Gyo-Young, Yoo, Jeihwan, Park, Donggun, Oh, Kyungseok, Kim, Changhyun, Jun, Young-Hyun


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  3. 3
    BER Measurement of a 5.8-Gb/s/pin Unidirectional Differential I/O for DRAM Application With DIMM Channel

    BER Measurement of a 5.8-Gb/s/pin Unidirectional Differential I/O for DRAM Application With DIMM Channel von JANG, Young-Chan, CHUNG, Hoeju, LEE, Yun-Sang, KIM, Woo-Seop, LEE, Jung-Bae, YOO, Jeihwan, KIM, Changhyun, CHOI, Youngdon, PARK, Hwanwook, KIM, Jaekwan, LIM, Soouk, SUNWOO, Jung, PARK, Moon-Sook, KIM, Hyung-Seuk, KIM, Sang-Yun


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  4. 4
    A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency

    A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency von Song, Ki-Whan, Kim, Jin-Young, Yoon, Jae-Man, Kim, Sua, Kim, Huijung, Chung, Hyun-Woo, Kim, Hyungi, Kim, Kanguk, Park, Hwan-Wook, Kang, Hyun Chul, Tak, Nam-Kyun, Park, Dukha, Kim, Woo-Seop, Lee, Yeong-Taek, Oh, Yong Chul, Jin, Gyo-Young, Yoo, Jeihwan, Park, Donggun, Oh, Kyungseok, Kim, Changhyun, Jun, Young-Hyun


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  5. 5
    A 31 ns Random Cycle VCAT-Based 4F2 DRAM With Manufacturability and Enhanced Cell Efficiency

    A 31 ns Random Cycle VCAT-Based 4F2 DRAM With Manufacturability and Enhanced Cell Efficiency von SONG, Ki-Whan, KIM, Jin-Young, TAK, Nam-Kyun, PARK, Dukha, KIM, Woo-Seop, LEE, Yeong-Taek, YONG CHUL OH, JIN, Gyo-Young, YOO, Jeihwan, PARK, Donggun, OH, Kyungseok, KIM, Changhyun, YOON, Jae-Man, JUN, Young-Hyun, KIM, Sua, KIM, Huijung, CHUNG, Hyun-Woo, KIM, Hyungi, KIM, Kanguk, PARK, Hwan-Wook, HYUN CHUL KANG


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  6. 6
    Self-calibrating transceiver for source synchronous clocking system with on-chip TDR and swing level control scheme

    Self-calibrating transceiver for source synchronous clocking system with on-chip TDR and swing level control scheme von Jang, Young-Chan, Park, Joon-Young, Shin, Sungcheol, Choi, Hundae, Lee, Kyongsu, Woo, Byungsuk, Park, Hwanwook, Kim, Woo-Seop, Choi, Youngdon, Kim, Jaekwan, Kim, Hyun-Kyung, Kim, Jayoung, Lim, Suyoun, Chung, Su-Jin, Kim, Sora, Yoo, Jeihwan, Kim, Changhyun


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  7. 7
    A 31ns random cycle VCAT-based 4F2 DRAM with enhanced cell efficiency

    A 31ns random cycle VCAT-based 4F2 DRAM with enhanced cell efficiency von Song, Ki-Whan, Kim, Jin-Young, Kim, Huijung, Chung, Hyun-Woo, Kim, Hyungi, Kim, Kanguk, Park, Hwan-Wook, Kang, Hyun Chul, Kim, Sua, Tak, Nam-kyun, Park, Dukha, Kim, Woo-Seop, Lee, Yeong-Taek, Oh, Yong Chul, Jin, Gyo-Young, Yoo, Jeihwan, Oh, Kyungseok, Kim, Changhyun, Lee, Won-Seong


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