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Quantitative analysis of ultrashallow junction of sub- 50 nm gate-length transistors: Junction depth, sheet resistance, short channel effects, and transistor performance
Veröffentlicht in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
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Quantitative analysis of ultrashallow junction of sub-50nm gate-length transistors: Junction depth, sheet resistance, short channel effects, and transistor performance
Veröffentlicht in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
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First Measurement of Coherent Elastic Neutrino-Nucleus Scattering on Argon
Veröffentlicht in Physical review letters
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