Step control of vicinal 6H-SiC(0001) surface by H 2 etching von Nakajima, A., Yokoya, H., Furukawa, Y., Yonezu, H.

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Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP von Dagnelund, D., Huang, Y. Q., Tu, C. W., Yonezu, H., Buyanova, I. A., Chen, W. M.

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Design and installation of the closed helical divertor in LHD von Masuzaki, S., Shoji, M., Tokitani, M., Murase, T., Kobayashi, M., Morisaki, T., Yonezu, H., Sakamoto, R., Yamada, H., Komori, A.

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Divertor heat and particle control experiments on the large helical device von Masuzaki, S., Kobayashi, M., Akiyama, T., Ohno, N., Morisaki, T., Shoji, M., Tokitani, M., Tanaka, H., Peterson, B.J., Yoshimura, S., Narihara, K., Yamada, I., Yasuhara, R., Murakami, A., Miyazawa, J., Murase, T., Kobuchi, T., Yonezu, H., Kawamura, G., Murakami, I., Takeiri, Y., Yamada, H., Komori, A.

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Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE von Umeno, K., Furukawa, Y., Urakami, N., Mitsuyoshi, S., Yonezu, H., Wakahara, A.

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MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates von Umeno, K., Furukawa, Y., Wakahara, A., Noma, R., Okada, H., Yonezu, H., Takagi, Y., Kan, H.

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Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy von Umeno, K., Furukawa, Y., Urakami, N., Noma, R., Mitsuyoshi, S., Wakahara, A., Yonezu, H.

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Electrical and luminescence properties of Mg-doped p-type GaPN grown by molecular beam epitaxy von Mitsuyoshi, S., Umeno, K., Furukawa, Y., Urakami, N., Wakahara, A., Yonezu, H.

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Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(1 0 0) substrates von Takagi, Y, Yonezu, H, Samonji, K, Tsuji, T, Ohshima, N

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Point defects in dilute nitride III-N–As and III-N–P von Chen, W.M., Buyanova, I.A., Tu, C.W., Yonezu, H.

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Analysis of quantum levels for self-assembled InGaAsN/GaP quantum dots von Fukami, F., Umeno, K., Furukawa, Y., Urakami, N., Mitsuyoshi, S., Okada, H., Yonezu, H., Wakahara, A.

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Overview of the Large Helical Device project von Iiyoshi, A, Komori, A, Ejiri, A, Emoto, M, Funaba, H, Goto, M, Ida, K, Idei, H, Inagaki, S, Kado, S, Kaneko, O, Kawahata, K, Kobuchi, T, Kubo, S, Kumazawa, R, Masuzaki, S, Minami, T, Miyazawa, J, Morisaki, T, Morita, S, Murakami, S, Muto, S, Mutoh, T, Nagayama, Y, Nakamura, Y, Nakanishi, H, Narihara, K, Nishimura, K, Noda, N, Ohdachi, S, Ohyabu, N, Oka, Y, Osakabe, M, Ozaki, T, Peterson, B.J, Sagara, A, Sakakibara, S, Sakamoto, R, Sasao, H, Sasao, M, Sato, K, Sato, M, Seki, T, Shimozuma, T, Shoji, M, Suzuki, H, Takeiri, Y, Tanaka, K, Toi, K, Tokuzawa, T, Tsumori, K, Tsuzuki, K, Watanabe, K.Y, Watari, T, Yamada, H, Yamada, I, Yamaguchi, S, Yokoyama, M, Akiyama, R, Chikaraishi, H, Haba, K, Hamaguchi, S, Iima, M, Imagawa, S, Inoue, N, Iwamoto, K, Kitagawa, S, Kodaira, J, Kubota, Y, Maekawa, R, Mito, T, Nagasaka, T, Nishimura, A, Takahashi, C, Takahata, K, Takita, Y, Tamura, H, Tsuzuki, T, Yamada, S, Yamauchi, K, Yanagi, N, Yonezu, H, Hamada, Y, Matsuoka, K, Murai, K, Ohkubo, K, Ohtake, I, Okamoto, M, Satoh, S, Satow, T, Sudo, S, Tanahashi, S, Yamazaki, K, Fujiwara, M, Motojima, O

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Not only vitamin K but also bisphosphonate normalize the serum undercarboxylated osteocalcin level in osteoporosis patients von Yonezu, H, Endo, T, Nagamachi, A, Adachi, K, Inoue, K, Kubo, T

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Growth of BxAl1-xN layers using decaborane on SiC substrates von NAKAJIMA, A, FURUKAWA, Y, YOKOYA, H, YONEZU, H

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Control of structural defects in group III–V–N alloys grown on Si von Yonezu, Hiroo

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Growth of Si/III–V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits von Furukawa, Y., Yonezu, H., Wakahara, A., Ishiji, S., Moon, S.Y., Morisaki, Y.

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Growth of high-quality AlN with low pit density on SiC substrates von Nakajima, A., Furukawa, Y., Koga, S., Yonezu, H.

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Application of microsize light-emitting diode structure for monolithic optoelectronic integrated circuits von Moon, S. Y., Yonezu, H., Furukawa, Y., Morisaki, Y., Yamada, S., Wakahara, A.

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Elemental devices, circuits and processes for a monolithic Si/III–V–N alloy OEIC von Yonezu, H., Furukawa, Y., Abe, H., Yoshikawa, Y., Moon, S.-Y., Utsumi, A., Yoshizumi, Y., Wakahara, A., Ohtani, M.

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Annealing behavior on luminescence properties of self-assembled InGaAsN/GaP quantum dots von Urakami, N., Umeno, K., Furukawa, Y., Fukami, F., Mitsuyoshi, S., Okada, H., Yonezu, H., Wakahara, A.

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