TCAD-based demonstration of improved spacer select gate EEPROM cell architecture von BAHNG, Yon-Sup

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New GGNMOS I/O Cell Array for Improved Electrical Overstress Robustness von Pang, Yon-Sup, Kim, Youngju

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Analytical subthreshold surface potential model for pocket n-MOSFETs von Yon-Sup Pang, Brews, J.R.

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Models for subthreshold and above-threshold currents in 0.1-μm pocket n-MOSFETs for low-voltage applications von Yon-Sup Pang, Brews, J.R.

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Dependence of Electrical Characteristics of Improved BCD nLDMOS on Process and Structural Parameters von Pang, Yon-Sup

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0.35μm, 30V fully isolated and low-Ron nLDMOS for DC-DC applications von Kyungho Lee, Haeung Jeon, Byunghee Cho, Joonhee Cho, Yon-Sup Pang, Jinwoo Moon, Kwon, Susanna, Hebert, Francois, Junghwan Lee, Taejong Lee

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Design of 0.1-μm pocket n-MOSFETs for low-voltage applications von Pang, Yon-Sup, Brews, John R

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Design of a 0.18-??m Logic Well-based nEDMOS and Improvement of Electrical Characteristics von (Pang), Yon-Sup Bahng

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New GGNMOS I/O Cell Array for Improved Electrical Overstress Robustness von Pang, Yon-Sup, Kim, Youngju

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Design of a 0.18-μm Logic Well-based nEDMOS and Improvement of Electrical Characteristics von 방연섭

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Semiconductor device to improve isolation breakdown voltage von PANG YON SUP

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Semiconductor device with increased isolation breakdown voltage von Pang, Yon Sup

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SEMICONDUCTOR DEVICE WITH INCREASED ISOLATION BREAKDOWN VOLTAGE von PANG, Yon Sup

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Semiconductor device with increased isolation breakdown voltage von Pang, Yon Sup

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BIPOLAR-CMOS-DMOS SEMICONDUCTOR DEVICE HAVING A DEEP TRENCH ISOLATION STRUCTURE FOR HIGH ISOLATION BREAKDOWN VOLTAGE von KIM, Young Ju, PANG, Yon Sup

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Models for subthreshold and above-threshold currents in 0.1-/spl mu/m pocket n-MOSFETs for low-voltage applications von Yon-Sup Pang, Brews, J.R.

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Models for subthreshold and above-threshold currents in 0.1-[mu]m pocket n-MOSFETs for low-voltage applications von Pang, Yon-Sup, Brews, J.R

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Bipolar-CMOS-DMOS Bipolar-CMOS-DMOS Semiconductor Device having a Deep Trench Isolation Structure for High Isolation Breakdown Voltage von PANG YON SUP, KIM YOUNG JU

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Models for subthreshold and above-threshold currents in 0.1-mu mpocket n-MOSFETs for low-voltage applications von Pang, Yon-Sup, Brews, J R

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SEMICONDUCTOR DEVICE AND MANUFACTRUING METHOD THEREOF von PANG, YON SUP

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