Model of crystal lattice strained along the preferential direction by anisotropic stress for GaAs heteroepitaxial films grown on vicinal Si(001) and Si(110) substrates by molecular... von Yodo, T.

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Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy von Yanagisawa, J., Matsumoto, H., Fukuyama, T., Shiraishi, Y., Yodo, T., Akasaka, Y.

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Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR-Assisted MBE von Yodo, T., Ando, H., Nosei, D., Harada, Y.

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Thermal properties of GaN/Si heterostructures grown by molecular beam epitaxy von Cervantes-Contreras, M., Quezada-Maya, C.A., López-López, M., González de la Cruz, G., Tamura, M., Yodo, T.

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Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(0 0 1) and Si(1 1 1) substrates by ECR-MBE von Yodo, T, Ando, H, Tsuchiya, H, Nosei, D, Shimeno, M, Harada, Y

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21pPSB-31 Near infrared absorption and reflection of the in InN on Si von Nakata, H., Yoshida, G., Yodo, T.

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Evaluation of a cathode gas channel with a water absorption layer/waste channel in a PEFC by using visualization technique von Sugiura, Kimihiko, Nakata, Motoki, Yodo, Tadakatsu, Nishiguchi, Yusuke, Yamauchi, Makoto, Itoh, Yasuhiko

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Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron c... von Yodo, T., Nakamura, T., Kouyama, T., Harada, Y.

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Relationship between the optical and structural properties in GaAs heteroepitaxial layers grown on Si substrates von Yodo, T., Tamura, M., Saitoh, T.

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Growth and characterization of GaSe and GaAs/GaSe on As-passivated Si(111) substrates von PALMER, J. E, SAITOH, T, YODO, T, TAMURA, M

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Misfit and threading dislocations in GaAs on vicinal (110) Si von Tamura, M., Yodo, T.

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Characterization of Polycrystalline GaN Layers Grown on Alkali-Metal-Free Glass Substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Resonance Plasma von Harada, Yasunori, Yodo, T., Hirano, Toshiyuki

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Buffer-enhanced room-temperature growth and characterization of epitaxial ZnO thin films von Sasaki, Atsushi, Hara, Wakana, Matsuda, Akifumi, Tateda, Norihiro, Otaka, Sei, Akiba, Shusaku, Saito, Keisuke, Yodo, Tokuo, Yoshimoto, Mamoru

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Visible emissions near 2.2 eV from InN films grown on Si (111) and sapphire (0001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy von Yodo, T., Yona, H., Harada, Y., Sasaki, A., Yoshimoto, M.

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Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy von Yodo, Tokuo, Yona, Hiroaki, Ando, Hironori, Nosei, Daiki, Harada, Yoshiyuki

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18pPSB-6 Near Infrared absorption in InN grown on n-Si von Nakata, H., Estrellado, E. L., Yoshida, G., Yodo, T.

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Growth of GaSe on As-passivated Si(111) substrates von Palmer, J.E., Saitoh, T., Yodo, T., Tamura, M.

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Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular-beam epitaxy assisted by electron cyclotron resonance plasma von Yona, H., Harada, Y., Yodo, T.

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GaAs heteroepitaxial growth on vicinal Si(110) substrates by molecular beam epitaxy von Yodo, T., Tamura, M., López, M., Kajikawa, Y.

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Rearrangement of misfit dislocations in GaAs on Si by post-growth annealing von Tamura, M., Yodo, T., Saitoh, T., Palmer, J.

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