A study on the entrainment and mixing process in the continental stratocumulus clouds measured during the RACORO campaign von Yeom, Jae Min, Yum, Seong Soo, Liu, Yangang, Lu, Chunsong

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A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact von Oh, Seung Yoon, Jeong, Yeong Je, Kang, Inho, Park, Ji-Hyeon, Yeom, Min Jae, Jeon, Dae-Woo, Yoo, Geonwook

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Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric von Yeom, Min Jae, Yang, Jeong Yong, Lee, Chan Ho, Heo, Junseok, Chung, Roy Byung Kyu, Yoo, Geonwook

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Influence of Quasi-Periodic Oscillation of Atmospheric Variables on Radiation Fog over A Mountainous Region of Korea von La, Inyeob, Yum, Seong Soo, Gultepe, Ismail, Yeom, Jae Min, Song, Jae In, Cha, Joo Wan

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Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors von Ji, Jongho, Yang, Jeong Yong, Lee, Sangho, Kim, Seokgi, Yeom, Min Jae, Lee, Gyuhyung, Shin, Heechang, Bae, Sang-Hoon, Ahn, Jong-Hyun, Kim, Sungkyu, Kim, Jeehwan, Yoo, Geonwook, Kum, Hyun S.

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Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors von Lee, Chan Ho, Park, Youngseo, Youn, Sukhyeong, Yeom, Min Jae, Kum, Hyun S., Chang, Jiwon, Heo, Junseok, Yoo, Geonwook

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Influence of Entrainment on Centimeter-Scale Cloud Microphysics in Marine Stratocumulus Clouds Observed during CSET von La, Inyeob, Yum, Seong Soo, Yeom, Jae Min, Shaw, Raymond A.

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Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric von Yang, Jeong Yong, Oh, Seung Yoon, Yeom, Min Jae, Kim, Seokgi, Lee, Gyuhyung, Lee, Kyusang, Kim, Sungkyu, Yoo, Geonwook

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Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer von Yang, Jeong Yong, Park, Minseong, Yeom, Min Jae, Baek, Yongmin, Yoon, Seok Chan, Jeong, Yeong Je, Oh, Seung Yoon, Lee, Kyusang, Yoo, Geonwook

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Cloud microphysical relationships and their implication on entrainment and mixing mechanism for the stratocumulus clouds measured during the VOCALS project von Yum, Seong Soo, Wang, Jian, Liu, Yangang, Senum, Gunnar, Springston, Stephen, McGraw, Robert, Yeom, Jae Min

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Cloud microphysical response to entrainment and mixing is locally inhomogeneous and globally homogeneous: Evidence from the lab von Yeom, Jae Min, Helman, Ian, Prabhakaran, Prasanth, Anderson, Jesse C, Yang, Fan, Shaw, Raymond A, Cantrell, Will

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High‐resolution measurements of microphysics and entrainment in marine stratocumulus clouds von Yeom, Jae Min, Szodry, Kai‐Erik, Siebert, Holger, Ehrlich, André, Mellado, Juan Pedro, Shaw, Raymond A., Yum, Seong Soo

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High-resolution measurements of microphysics and entrainment in marine stratocumulus clouds von Yeom, Jae Min, Szodry, Kai‐Erik, Siebert, Holger, Ehrlich, André, Mellado, Juan Pedro, Shaw, Raymond A., Yum, Seong Soo

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Design of p‐WSe 2 /n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors von Lee, Chan Ho, Park, Youngseo, Youn, Sukhyeong, Yeom, Min Jae, Kum, Hyun S., Chang, Jiwon, Heo, Junseok, Yoo, Geonwook

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A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors von Jeong, Yeong Je, Lee, Chan Ho, Yeom, Min Jae, Yang, Jeong Yong, Yoo, Geonwook

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Reconfigurable Physical Reservoir in GaN/α-In 2 Se 3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer von Yang, Jeong Yong, Park, Minseong, Yeom, Min Jae, Baek, Yongmin, Yoon, Seok Chan, Jeong, Yeong Je, Oh, Seung Yoon, Lee, Kyusang, Yoo, Geonwook

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Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure von Yang, Jeong Yong, Yeom, Min Jae, Lee, Jaeyong, Lee, Kyusang, Park, Changkun, Heo, Junseok, Yoo, Geonwook

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A study of the effect of regenerated CCN on marine stratocumulus cloud development using the WRF-LES model with spectral bin microphysics scheme von Choi, Kyoung Ock, Yum, Seong Soo, Chang, Dong Yeong, Yeom, Jae Min, Lee, Seoung Soo

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Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors von Lee, Gyuhyung, Yang, Jeongyong, Yeom, Min Jae, Yoon, Sisung, Yoo, Geonwook

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Effects of a Spike-Annealed HfO[sub.2] Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors von Lee, Gyuhyung, Yang, Jeongyong, Yeom, Min Jae, Yoon, Sisung, Yoo, Geonwook

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