Optical Third-Harmonic Generation in Graphene von Hong, Sung-Young, Dadap, Jerry I., Petrone, Nicholas, Yeh, Po-Chun, Hone, James, Osgood, Richard M.

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Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications von Liu, An-Chen, Tu, Po-Tsung, Chen, Hsin-Chu, Lai, Yung-Yu, Yeh, Po-Chun, Kuo, Hao-Chung

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AlInGaN/GaN HEMTs With High Johnson's Figure-of-Merit on Low Resistivity Silicon Substrate von Sanyal, Indraneel, Lin, En-Shuo, Wan, Yu-Chen, Chen, Kun-Ming, Tu, Po-Tsung, Yeh, Po-Chun, Chyi, Jen-Inn

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Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy von Jin, Wencan, Yeh, Po-Chun, Zaki, Nader, Zhang, Datong, Sadowski, Jerzy T, Al-Mahboob, Abdullah, van der Zande, Arend M, Chenet, Daniel A, Dadap, Jerry I, Herman, Irving P, Sutter, Peter, Hone, James, Osgood, Jr, Richard M

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Direct Measurement of the Tunable Electronic Structure of Bilayer MoS2 by Interlayer Twist von Yeh, Po-Chun, Jin, Wencan, Zaki, Nader, Kunstmann, Jens, Chenet, Daniel, Arefe, Ghidewon, Sadowski, Jerzy T, Dadap, Jerry I, Sutter, Peter, Hone, James, Osgood, Richard M

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Modeling contamination conditions in small-scale industrial areas to estimate health savings benefits associated with remediation von Tseng, Chao-Heng, Chen, Ling-Ling, Yeh, Po-Chun

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Coverage-Dependent Modification of the Surface Electronic Structure of an Organic-Semiconductor-Adsorbate Layer von Hong, Sung-Young, Yeh, Po-Chun, Lee, Ilkyu, Yu, Jaeeun, Dadap, Jerry I, Nuckolls, Colin, Osgood, Richard M

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Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O₂: Interfacial Layer Soft Breakdown and Physical Modeling von Cho, Chen-Yi, Chao, Tzu-Yi, Lin, Tzu-Yao, Wang, I-Ting, De, Sourav, Chen, Yu-Sheng, Ong, Yi-Ching, Lin, Yu-De, Yeh, Po-Chun, Hou, Tuo-Hung

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Promising Engineering Approaches for Improving the Reliability of HfZrO x 2-D and 3-D Ferroelectric Random Access Memories von Lin, Yu-De, Yeh, Po-Chun, Tzeng, Pei-Jer, Hou, Tuo-Hung, Wu, Chih-I, King, Ya-Chin, Lin, Chrong Jung

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Layer-dependent electronic structure of an atomically heavy two-dimensional dichalcogenide von Yeh, Po-Chun, Jin, Wencan, Zaki, Nader, Zhang, Datong, Liou, Jonathan T., Sadowski, Jerzy T., Al-Mahboob, Abdullah, Dadap, Jerry I., Herman, Irving P., Sutter, Peter, Osgood, Richard M.

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Interfacial Dipole Formation and Surface-Electron Confinement in Low-Coverage Self-Assembled Thiol Layers: Thiophenol and p‑Fluorothiophenol on Cu(111) von Hong, Sung-Young, Yeh, Po-Chun, Dadap, Jerry I, Osgood, Richard. M

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Scaling performance of Ga2O3/GaN nanowire field effect transistor von Li, Chi-Kang, Yeh, Po-Chun, Yu, Jeng-Wei, Peng, Lung-Han, Wu, Yuh-Renn

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Enhancing bright-field image of microorganisms by local plasmon of Ag nanoparticle array von Hsiao, Hui-Hsin, Yeh, Po-Chun, Wang, Huai-Hsien, Cheng, Tian-You, Chang, Hung-Chun, Wang, Yuh-Lin, Wang, Juen-Kai

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P-116: A Multi-Line Driving Scheme for R2R PM Ch-LCD von Yeh, Po-Chun, Chen, Heng-Yin, Liang, Chao-Chiun, Wei-Sun, Cheng, Su, Ju-Yuen

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Layer dependence of third-harmonic generation in thick multilayer graphene von Yang, Hao, Guan, Honghua, Biekert, Nicolas, Arefe, Ghidewon, Chang, Damien C., Sun, Yawen, Yeh, Po-Chun, Liu, Xiaoping, Hong, Sung-Young, Marion, Ida Delač, Kralj, Marko, Hone, James C., Osgood, Richard M., Dadap, Jerry I.

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Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-en... von Yeh, Po-Chun, Lin, Yun-Wei, Huang, Yue-Lin, Hung, Jui-Hung, Lin, Bo-Ren, Yang, Lucas, Wu, Cheng-Han, Wu, Tzu-Kuan, Wu, Chao-Hsin, Peng, Lung-Han

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P-135: A Low Power and Video Driving Scheme for Roll-to-Roll Cholesteric LCD von Yeh, Po-Chun, Liang, Chao-Chiun, Chen, Heng-Yin, Sun, Cheng-Wei, Su, Ju-Yuen

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Observation of image states in graphene on Ir(111) by two-photon photoemission von Dadap, Jerry I., Kralj, Marko, Petrovic, Marin, Knox, Kevin R., Bhandari, Rohan, Yeh, Po-Chun, Zaki, Nader, Osgood, Richard M.

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Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process von Kuo, Chi-Yuan, Lin, Wei-Chen, Lo, Tsung-Tien, Shen, Ching-Hsuan, Shen, Ming-Yu, Lee, Chia-Chan, Lin, Chi-Ping, Lin, Yuang-Ming, Huang, Haw-Tyng, Yeh, Po-Chun, Chen, Hsin-Chu, Wu, Chih-I

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Investigating the effect of O2 plasma treatment on the operational characteristics of Schottky-gate AlGaN/GaN HEMT von Liu, An-Chen, Huang, Yu-Wen, Chen, Hsin-Chu, Dong, Yi-Jun, Tu, Po-Tsung, Hsu, Lung-Hsing, Lai, Yung-Yu, Yeh, Po-Chun, Huang, I-Yu, Kuo, Hao-Chung

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