Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide von Cheng, C.H., Chen, P.C., Wu, Y.H., Wu, M.J., Yeh, F.S., Chin, Albert

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High-Density and Low-Leakage-Current MIM Capacitor Using Stacked \hbox/\hbox Insulators von Lin, S.H., Chiang, K.C., Chin, A., Yeh, F.S.

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Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT von Lin, S.H., Yeh, F.S., Cheng, C.H., Chin, A., Chen, W.B.

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Improved High Temperature Retention for Charge-Trapping Memory by Using Double Quantum Barriers von Yang, H.J., Chin, A., Lin, S.H., Yeh, F.S., McAlister, S.P.

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Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow Junctions von Lin, S.H., Chen, W.B., Cheng, C.H., Yeh, F.S., Chin, A.

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Improving the Retention and Endurance Characteristics of Charge-Trapping Memory by Using Double Quantum Barriers von Lin, S.H., Yang, H.J., Chen, W.B., Yeh, F.S., McAlister, S.P., Chin, A.

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A Novel Self-Aligned Etch-Stopper Structure With Lower Photo Leakage for AMLCD and Sensor Applications von Chung-Yu Liang, Feng-Yuan Gan, Po-Tsun Liu, Yeh, F.S., Chen, S.H.-L., Ting-Chang Chang

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Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using \hbox/\hbox Dielectrics von Lin, S.H., Chiang, K.C., Yeh, F.S., Chin, A.

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Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using [Formula Omitted] Dielectrics von Lin, S.H, Chiang, K.C, Yeh, F.S, Chin, A

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High-Density and Low-Leakage-Current MIM Capacitor Using Stacked [Formula Omitted] Insulators von Lin, S.H, Chiang, K.C, Chin, A, Yeh, F.S

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Low- V TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions von Lin, S.H., Liu, S.L., Yeh, F.S., Chin, A.

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Bipolar switching characteristics of low-power Geo resistive memory von Cheng, C.H., Chen, P.C., Liu, S.L., Wu, T.L., Hsu, H.H., Chin, Albert, Yeh, F.S.

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Higher- κ titanium dioxide incorporating LaAlO 3 as dielectrics for MIM capacitors von Cheng, C.H., Hsu, H.H., Chen, P.C., Liou, B.H., Chin, Albert, Yeh, F.S.

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Low-[Formula Omitted] TaN/HfLaO [Formula Omitted]-MOSFETs Using Low-Temperature Formed Source-Drain Junctions von Lin, S.H, Liu, S.L, Yeh, F.S, Chin, A

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Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors von CHENG, C. H, HSU, H. H, CHEN, P. C, LIOU, B. H, CHIN, Albert, YEH, F. S

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High Density and Low Leakage Current in [Formula Omitted] MIM Capacitors Processed at 300 [Formula Omitted] von Cheng, C.H, Lin, S.H, Jhou, K.Y, Chen, W.J, Chou, C.P, Yeh, F.S, Hu, J, Hwang, M, Arikado, T, McAlister, S.P, Chin, A

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Comparison of MONOS Memory Device Integrity When Using \hbox\hbox\hbox Trapping Layers With Different N Compositions von Yang, H.J., Cheng, C.F., Chen, W.B., Lin, S.H., Yeh, F.S., McAlister, S.P., Chin, A.

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Comparison of MONOS Memory Device Integrity When Using [Formula Omitted] Trapping Layers With Different N Compositions von Yang, H.J, Cheng, C.F, Chen, W.B, Lin, S.H, Yeh, F.S, McAlister, S.P, Chin, A

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Expression of a bi-functional and thermostable amylopullulanase in transgenic rice seeds leads to autohydrolysis and altered composition of starch von Chiang, C.M, Yeh, F.S, Huang, L.F, Tseng, T.H, Chung, M.C, Wang, C.S, Lur, H.S, Shaw, J.F, Yu, S.M

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Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper) von Chin, Albert, Chang, M.F., Lin, S.H., Chen, W.B., Lee, P.T., Yeh, F.S., Liao, C.C., Li, M.-F., Su, N.C., Wang, S.J.

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