Study of BiCMOS logic gate configurations for improved low-voltage performance von Tsui, P.G.Y., Pappert, B., Sun, S.W., Yeargain, J.R.

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A fully complementary BiCMOS technology for sub-half-micrometer microprocessor applications von Sun, S.W., Tsui, P.G.Y., Somero, B.M., Klein, J., Pintchovski, F., Yeargain, J.R., Pappert, B., Bertram, R.

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Effects of ion-beam mixing on the performance and reliability of devices with self-aligned silicide structure von Ku, Y.H., Lee, S.K., Kwong, D.-L., Lee, C.O., Yeargain, J.R.

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Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing von KU, Y. H, LEE, S. K, SHIH, D. K, KWONG, D. L, LEE, C.-O, YEARGAIN, J. R

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Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N2O oxynitridation von YEONG-SEUK KIM, OKADA, Y, YEARGAIN, J. R, KO-MIN CHANG, TOBIN, P. J, MORTON, B, CHOE, H, BOWERS, M, KUO, C, CHRUDIMSKY, D, AJURIA, S. A

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A novel 0.5-μm n+-p+ poly-gated salicide CMOS process using germanium implantation von PFIESTER, J. R, YEARGAIN, J. R, SWENSON, M. S, ALVIS, J. R

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Low-defect-density and high-reliability FETMOS EEPROM' s fabricatedusing furnace N(2)O oxynitridation von Kim, Y-S, Okada, Y, Chang, K-M, Tobin, P J, Morton, B, Choe, H, Bowers, M, Kuo, C, Chrudimsky, D, Ajuria, S A, Yeargain, J R

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Low-defect-density and high-reliability FETMOS EEPROM''s fabricatedusing furnace N(2)O oxynitridation von Kim, Y-S, Okada, Y, Chang, K-M, Tobin, P J, Morton, B, Choe, H, Bowers, M, Kuo, C, Chrudimsky, D, Ajuria, S A, Yeargain, J R

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A novel 0.5- mu m n super(+)-p super(+) poly-gated salicide CMOS process using germanium implantation von Pfiester, J R, Yeargain, J R, Swenson, M S, Alvis, J R

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A Modular 0.5-micron BiCMOS Technology For Low Voltage Logic Applications von Tsui, P.G.Y., Shih Wei Sun, Yeargain, J.R., Pappert, B.

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An 80 ns 32K EEPROM using the FETMOS cell von Kuo, C., Yeargain, J.R., Downey, W.J., Ilgenstein, K.A., Jorvig, J.R., Smith, S.L., Bormann, A.R.

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A novel germanium implanted salicide technology for CMOS VLSI von Pfiester, J.R., Yeargain, R.

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A novel band-to-band tunneling induced convergence mechanism for low current, high density flash EEPROM applications von Shum, D.P., Swift, C.T., Higman, J.M., Taylor, W.J., Kuo-Tung Chang, Ko-Min Chang, Yeargain, J.R.

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High Density Fetmos Eeprom Cell Using ONO Inter-Polysilicon Dielectrics von Kuo, Clinton, Fu, Kuan, Kim, Peter, Chonko, Mark, Jorvig, Jeff, Yeargain, John R., Barnes, John J.

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A 0.4 micron fully complementary BiCMOS technology for advanced logic and microprocessor applications von Sun, S.W., Tsui, P.G.Y., Somero, B.M., Klein, J., Pintchovski, F., Yeargain, J.R., Pappert, B.

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