Vdd impact on propagation pulse width variation in PD SOI circuits von Min, B.W., Workman, G., Duckhyun Chang, Zia, O., Yanyao Yu, Widenhofer, R., Simon, B., Cave, N., Sanchez, H., Veeraraghavan, S., Mendicino, M., Yeargain, B.

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A versatile 0.25 micron CMOS technology von Poon, S., Atwell, C., Hart, C., Kolar, D., Lage, C., Yeargain, B.

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Study of BiCMOS logic gate configurations for improved low-voltage performance von Tsui, P.G.Y., Pappert, B., Sun, S.W., Yeargain, J.R.

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A fully complementary BiCMOS technology for sub-half-micrometer microprocessor applications von Sun, S.W., Tsui, P.G.Y., Somero, B.M., Klein, J., Pintchovski, F., Yeargain, J.R., Pappert, B., Bertram, R.

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Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N2O oxynitridation von YEONG-SEUK KIM, OKADA, Y, YEARGAIN, J. R, KO-MIN CHANG, TOBIN, P. J, MORTON, B, CHOE, H, BOWERS, M, KUO, C, CHRUDIMSKY, D, AJURIA, S. A

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Low-defect-density and high-reliability FETMOS EEPROM's fabricated using furnace N/sub 2/O oxynitridation von Kim, Y.-S., Okada, Y., Chang, K.-M., Tobin, P.J., Morton, B., Choe, H., Bowers, M., Kuo, C., Chrudimsky, D., Ajuria, S.A., Yeargain, J.R.

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A Modular 0.5-micron BiCMOS Technology For Low Voltage Logic Applications von Tsui, P.G.Y., Shih Wei Sun, Yeargain, J.R., Pappert, B.

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Low-defect-density and high-reliability FETMOS EEPROM' s fabricatedusing furnace N(2)O oxynitridation von Kim, Y-S, Okada, Y, Chang, K-M, Tobin, P J, Morton, B, Choe, H, Bowers, M, Kuo, C, Chrudimsky, D, Ajuria, S A, Yeargain, J R

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Low-defect-density and high-reliability FETMOS EEPROM''s fabricatedusing furnace N(2)O oxynitridation von Kim, Y-S, Okada, Y, Chang, K-M, Tobin, P J, Morton, B, Choe, H, Bowers, M, Kuo, C, Chrudimsky, D, Ajuria, S A, Yeargain, J R

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A 0.4 micron fully complementary BiCMOS technology for advanced logic and microprocessor applications von Sun, S.W., Tsui, P.G.Y., Somero, B.M., Klein, J., Pintchovski, F., Yeargain, J.R., Pappert, B.

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