High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28Si12C, Natural and 13C – Enriched 4H-SiC von Ivanov, Ivan G., Son, Nguyen Tien, Lundqvist, Bjorn, Janzén, Erik, Liljedahl, Rickard, Kordina, Olle, Chen, J.T., Hassan, Jawad, Stenberg, Pontus, Yazdanfar, Milan, Ager, Joel W.

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Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates von Yazdanfar, M., Ivanov, I. G., Pedersen, H., Kordina, O., Janzén, E.

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On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide von Yazdanfar, M., Pedersen, H., Sukkaew, P., Ivanov, I.G., Danielsson, Ö., Kordina, O., Janzén, E.

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Process stability and morphology optimization of very thick 4H–SiC epitaxial layers grown by chloride-based CVD von Yazdanfar, M., Stenberg, P., Booker, I.D., Ivanov, I.G., Kordina, O., Pedersen, H., Janzén, E.

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Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates von Kordina, Olof, Pedersen, Henrik, Yazdanfar, Milan, Janzén, Erik

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Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC von Yazdanfar, Milan, Danielsson, Örjan, Kalered, Emil, Sukkaew, Pitsiri, Kordina, Olle, Nilsson, Daniel, Ivanov, Ivan G, Ojamäe, Lars, Janzén, Erik, Pedersen, Henrik

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Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC von Yazdanfar, Milan, Danielsson, Örjan, Kordina, Olle, Janzén, Erik, Pedersen, Henrik

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Precursors and defect control for halogenated CVD of thick SiC epitaxial layers von Yazdanfar, Milan

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Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions von Henry, Anne, Kordina, Olof, Leone, Stefano, Janzén, Erik, Pedersen, Henrik, Yazdanfar, Milan

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Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC von Danielsson, Örjan, Kordina, Olof, Yazdanfar, Milan, Janzén, Erik, Sukkaew, Pitsiri

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High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure super(28)Si super(12)C, Natural and super(13)C - Enriched 4H-SiC von Ivanov, Ivan G, Yazdanfar, Milan, Lundqvist, Bjorn, Chen, Tai, Hassan, Jawad Ul, Stenberg, Pontus, Liljedahl, Rickard, Son, Nguyen Tien, Ager, Joel W, Kordina, Olle, Janzen, Erik

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Effect of process parameters on dislocation density in thick 4H-SiC epitaxial layers grown by chloride-based CVD on 4 degrees off-axis substrates von Yazdanfar, Milan, Pedersen, Henrik, Kordina, Olle, Janzén, Erik

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Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers von Janzén, Erik, Pedersen, Henrik, Ivanov, Ivan.G, Booker, Ian D., Kordina, Olof, Stenberg, Pontus, Yazdanfar, Milan

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High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC von Ivanov, Ivan Gueorguiev, Yazdanfar, Milan, Lundqvist, Björn, Chen, Jr-Tai, ul-Hassan, Jawad, Stenberg, Pontus, Liljedahl, Rickard, Son, Nguyen Tien, Ager, Joel W. III, Kordina, Olle, Janzén, Erik

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