Fast Parallel Solver of Time-harmonic Wave Equation with Topography von Yavich, N. B., Golubev, V. I., Khokhlov, N. I.

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PDE-constrained Optimization for Electroencephalographic Source Reconstruction von Malovichko, M. S., Yavich, N. B., Razorenova, A. M., Golubev, V. I., Koshev, N. A.

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Numerical analysis of a two-level preconditioner for the diffusion equation with an anisotropic diffusion tensor von Kuznetsov, Yu A, Boiarkine, O V, Kapyrin, I V, Yavich, N B

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PDE-constrained optimization for electroencephalographic source reconstruction von Malovichko, M. S, Yavich, N. B, Razorenova, A. M, Koshev, N. A

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Numerical analysis of a two-level preconditioner for the diffusion equation with an anisotropic diffusion tensor von Kuznetsov, Yu.A., Boiarkine, O.V., Kapyrin, I.V., Yavich, N. B.

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PDE-constrained optimization for electroencephalographic source reconstruction von Malovichko, M S, Yavich, N B, Razorenova, A M, Koshev, N A

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Porous Proton- and Chloride-Ion Conducting Layers Based on Ethanolamine Derivatives of PVC on the Surfaces of Fabrics von Tsivadze, A. Yu, Fridman, A. Ya, Morozova, E. M., Sokolova, N. P., Voloshchuk, A. M., Bardyshev, I. I., Gorbunov, A. M., Novikov, A. K., Polyakova, I. Ya, Titova, B. N., Yavich, A. A.

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Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures von Kladko, V., Kuchuk, A., Naumov, А., Safriuk, N., Kolomys, O., Kryvyi, S., Stanchu, H., Belyaev, A., Strelchuk, V., Yavich, B., Mazur, Yu.I., Ware, M.E., Salamo, G.J.

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Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor von Yakovlev, E.V., Talalaev, R.A., Makarov, Yu.N., Yavich, B.S., Wang, W.N

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Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures von Kladko, V. P., Kuchuk, A. V., Safriuk, N. V., Machulin, V. F., Belyaev, A. E., Konakova, R. V., Yavich, B. S., Ber, B. Ya, Kazantsev, D. Yu

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X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure von Strelchuk, V. V., Kladko, V. P., Avramenko, E. A., Kolomys, O. F., Safryuk, N. V., Konakova, R. V., Yavich, B. S., Valakh, M. Ya, Machulin, V. F., Belyaev, A. E.

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Defects in GaN films studied by positron annihilation spectroscopy von Pi, X D, Coleman, P G, Tseng, C L, Burrows, C P, Yavich, B, Wang, W N

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Light Emitting Diode with Charge Asymmetric Resonance Tunneling von Rebane, Y.T., Shreter, Y.G., Yavich, B.S., Bougrov, V.E., Stepanov, S.I., Wang, W.N.

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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios von Kladko, V.P.

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High-temperature annealing of AlGaN: Stress, structural, and compositional changes von Rajasingam, S., Sarua, A., Kuball, M., Cherodian, A., Miles, M. J., Younes, C. M., Yavich, B., Wang, W. N., Grandjean, N.

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Ion-exchange sorption of mineral impurities from enzyme-containing solutions von Yavich, P. A, Churadze, L. I, Rukhadze, T. A, Kakhetelidze, M. B, Gagua, N. D, Zhvaniya, L. I

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Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor von Yakovlev, E V, Talalaev, R A, Makarov, Y N, Yavich, B S, Wang, W N

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Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers von Stepanov, S, Wan, W N, Bougrov, V, Rebane, Y T, Shreter, Y G, Yavich, B S

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Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity von Boltovets, M.S.

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Photoemission of spinpolarized electrons from strained GaAsP von DRESCHER, P, ANDRESEN, H. G, HARTMANN, P, HOFFMANN, J, JENNEWEIN, P, KAISER, K. H, KÖBIS, S, KOVALENKOV, O. V, KREIDEL, H. J, LANGBEIN, J, MAMAEV, Y. A, NACHTIGALL, C, AULENBACHER, K, PETRI, M, PLÜTZER, S, REICHERT, E, SCHEMIES, M, SCHÖPE, H.-J, STEFFENS, K.-H, STEIGERWALD, M, SUBASHIEV, A. V, TRAUTNER, H, VINOKUROV, D. A, BERMUTH, J, YASHIN, Y. P, YAVICH, B. S, DOMBO, T, FISCHER, H, EUTENEUER, H, FALEEV, N. N, GALAKTIONOV, M. S, HARRACH, D. V

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