Application of Optimal Control to Inversion of Self-Potential Data: Theory and Synthetic Examples von Malovichko, Mikhail S., Tarasov, Andrey V., Yavich, Nikolay B., Titov, Konstantin V.

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Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition von Kipshidze, G., Yavich, B., Chandolu, A., Yun, J., Kuryatkov, V., Ahmad, I., Aurongzeb, D., Holtz, M., Temkin, H.

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Fast Parallel Solver of Time-harmonic Wave Equation with Topography von Yavich, N. B., Golubev, V. I., Khokhlov, N. I.

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PDE-constrained Optimization for Electroencephalographic Source Reconstruction von Malovichko, M. S., Yavich, N. B., Razorenova, A. M., Golubev, V. I., Koshev, N. A.

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Formation of nickel nanodots on GaN von Aurongzeb, D., Ram, K. Bhargava, Holtz, M., Basavaraj, M., Kipshidze, G., Yavich, B., Nikishin, S. A., Temkin, H.

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Growth of GaN Nanowires on Epitaxial GaN von Aurongzeb, D., Song, D.Y., Kipshidze, G., Yavich, B., Nyakiti, L., Lee, R., Chaudhuri, J., Temkin, H., Holtz, M.

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Chirp dependence in InGaAs/InAlAs multiple quantum well electro-absorptive modulators near polarization-independent conditions von Pamplona Pires, M., Yavich, B., Souza, P. L.

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Conduction mechanisms and low-frequency electrical noise studies in pin InGaAs/InAlAs strained MQW photodiodes von Pires, M.P., Guastavino, F.C., Yavich, B., Souza, P.L., Mwongbote, A.E., Valenza, M.

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Defects in GaN films studied by positron annihilation spectroscopy von Pi, X D, Coleman, P G, Tseng, C L, Burrows, C P, Yavich, B, Wang, W N

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Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures von Avakyants, L. P., Bokov, P. Yu, Chervyakov, A. V., Chuyas, A. V., Yunovich, A. E., Vasileva, E. D., Bauman, D. A., Uelin, V. V., Yavich, B. S.

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Electronic scattering in doped finite superlattices von Henriques, A. B., Souza, P. L., Yavich, B.

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Reliably designing InGaAs-InAlAs strained multiple-quantum-well structures for amplitude modulation von Tribuzy, C.V.-B., Pires, M.P., de Souza, P.L., Yavich, B.

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High-temperature annealing of AlGaN: Stress, structural, and compositional changes von Rajasingam, S., Sarua, A., Kuball, M., Cherodian, A., Miles, M. J., Younes, C. M., Yavich, B., Wang, W. N., Grandjean, N.

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Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor von Yakovlev, E.V., Talalaev, R.A., Makarov, Yu.N., Yavich, B.S., Wang, W.N

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Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures von Kladko, V., Kuchuk, A., Naumov, А., Safriuk, N., Kolomys, O., Kryvyi, S., Stanchu, H., Belyaev, A., Strelchuk, V., Yavich, B., Mazur, Yu.I., Ware, M.E., Salamo, G.J.

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Anomalous I versus V characteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators von Pires, M P, Guastavino, F, Yavich, B, Souza, P L

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Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grown by low pressure metalorganic vapor phase epitaxy von Hanamoto, L. K., Farias, C. M. A., Henriques, A. B., Tribuzy, C. V. B., Souza, P. L., Yavich, B.

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Observation of densely populated Tamm states in modulation-doped superlattices von Henriques, A. B., Hanamoto, L. K., Souza, P. L., Yavich, B.

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On the optimization of InGaAs-InAlAs quantum-well structures for electroabsorption modulators von Pamplona Pires, M., Lustoza de Souza, P., Yavich, B., Pereira, R.G., Carvalho, W.

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Effect of growth temperature on C-doped InAlAs layers grown by LP-MOVPE von Ribeiro, M.L., Souza, P.L., Tribuzy, C.V.-B., Pires, M.P., Yavich, B.

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