Light guide for pixel crosstalk improvement in deep submicron CMOS image sensor von Hsu, T.H., Fang, Y.K., Lin, C.Y., Chen, S.F., Lin, C.S., Yaung, D.N., Wuu, S.G., Chien, H.C., Tseng, C.H., Lin, J.S., Wang, C.S.

Volltext

An effective method to improve the sensitivity of deep submicrometer CMOS image sensors von Hsu, T.H., Fang, Y.K., Yaung, D.N., Lin, J.S., Wuu, S.G., Chien, H.C., Tseng, C.H., Wang, C.S., Chen, S.F., Lin, C.Y., Lin, C.S., Chou, T.H.

Volltext

Dramatic reduction of optical crosstalk in deep-submicrometer CMOS imager with air gap guard ring von Hsu, T.H., Fang, Y.K., Yaung, D.N., Wuu, S.G., Chien, H.C., Wang, C.S., Lin, J.S., Tseng, C.H., Chen, S.F., Lin, C.S., Lin, C.Y.

Volltext

Color mixing improvement of CMOS image sensor with air-gap-guard ring in deep-submicrometer CMOS technology von Hsu, T.H., Fang, Y.K., Yaung, D.N., Wuu, S.G., Chien, H.C., Wang, C.S., Lin, J.S., Tseng, C.H., Chen, S.F., Lin, C.S., Lin, C.Y.

Volltext

To suppress photoexcited current of hydrogenated polysilicon TFTs with low temperature oxidation of polychannel von Yaung, D.N., Fang, Y.K., Chen, C.H., Hung, C.C., Tsao, F.C., Wuu, S.G., Liang, M.S.

Volltext

Narrow width effects of bottom-gate polysilicon thin film transistors von Yaung, D.N., Fang, Y.K., Hwang, K.C., Lee, K.Y., Wu, K.H., Ho, J.J., Chen, C.Y., Wang, Y.J., Liang, M.S., Lee, J.Y., Wuu, S.G.

Volltext

A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-μm CMOS technology von Hsu, T.H., Fang, Y.K., Yaung, D.N., Wuu, S.G., Chien, H.C., Tseng, C.H., Yao, L.L., Wang, W.D., Wang, C.S., Chen, S.F.

Volltext

A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-/spl mu/m CMOS technology von Hsu, T.H., Fang, Y.K., Yaung, D.N., Wuu, S.G., Chien, H.C., Tseng, C.H., Yao, L.L., Wang, W.D., Wang, C.S., Chen, S.F.

Volltext

A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-[micro]m CMOS technology von Hsu, T.H, Fang, Y.K, Yaung, D.N, Wuu, S.G, Chien, H.C, Tseng, C.H, Yao, L.L, Wang, W.D, Wang, C.S, Chen, S.F

Volltext

The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-[micro]m CMOS image sensor von Hsu, T.H, Fang, Y.K, Yaung, D.N, Wuu, S.G, Chien, H.C, Wang, C.S, Lin, J.S, Tseng, C.H, Chen, S.F, Lin, C.S, Lin, C.Y

Volltext

The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-μm CMOS image sensor von Hsu, T.H., Fang, Y.K., Yaung, D.N., Wuu, S.G., Chien, H.C., Wang, C.S., Lin, J.S., Tseng, C.H., Chen, S.F., Lin, C.S., Lin, C.Y.

Volltext

Subthreshold characteristics of submicrometer polysilicon thin film transistor von Yaung, D.N., Fang, Y.K., Huang, K.C., Wang, Y.J., Hung, C.C., Liang, M.S., Wuu, S.G.

Volltext

A novel /spl beta/-SiC/Si heterojunction backward diode von Hwang, J.D., Fang, Y.K., Chen, K.H., Yaung, D.N.

Volltext

High mobility β-SiC epilayer prepared by low-pressure rapid thermal chemical vapor deposition on a (100) silicon substrate von Hwang, J.D., Fang, Y.K., Song, Y.J., Yaung, D.N.

Volltext

High performance submicron bottom gate TFTs with self aligned Ti-silicide interpoly contact and poly-channel oxidation for high-density SRAM von Yaung, D.N, Fang, Y.K, Huang, K.C, Chen, C.Y, Wang, Y.J, Hung, C.C, Wuu, S.G, Liang, M.S

Volltext