The influence of inversion channel defect on silicon MOS-structure current parameters von Smyntyna, V.A., Kulinich, O.A., Yatsunskiy, I.R., Glauberman, M.A., Sviridova, O.V.

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The connection between structure of control gate and operation reliability of silicon MOS-transistor von Kulinich, O.A., Smyntyna, V.A., Yatsunskiy, I.R., Glauberman, M.A., Chemeresyuk, G.G.

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Technique for Oxidation Parameters Definition, Based on Investigation of Defects Formation Images in Silicon Inversion MOS - Structures von Smyntyna, V.A., Kulinich, O.A., Glauberman, M.A., Chemeresyuk, G.G., Yatsunskiy, I.R., Sviridova, O.V.

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