Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8 von Awaji, Naoki, Ozaki, Shinji, Nishino, Junichi, Noguchi, Sinichi, Yamamoto, Tohru, Syoji, Takashi, Yamagami, Motoyuki, Kobayashi, Akira, Hirai, You, Shibata, Masahiro, Yamaguchi, Koji, Liu, Kuang-Yu, Kawado, Seiji, Takahashi, Mamoru, Yasuami, Shigeru, Konomi, Ichiro, Kimura, Shigeru, Hirai, Yasuharu, Hasegawa, Masaki, Komiya, Satoshi, Hirose, Takayuki, Okajima, Toshihiro

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The design and performance of beamline BL16XU at SPring-8 von Hirai, Yasuharu, Yasuami, Shigeru, Kobayashi, Akira, Hirai, You, Nishino, Jun’ichi, Shibata, Masahiro, Yamaguchi, Koji, Liu, Kuang-Yu, Kawado, Seiji, Yamamoto, Tohru, Noguchi, Shin’ichi, Takahashi, Mamoru, Konomi, Ichiro, Kimura, Shigeru, Hasegawa, Masaki, Awaji, Naoki, Komiya, Satoshi, Hirose, Takayuki, Ozaki, Shinji, Okajima, Toshihiro, Ishikawa, Tetsuya, Kitamura, Hideo

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Lattice parameter measurement of GaAs crystals using monochromatic synchrotron radiation von USUDA, K, YASUAMI, S, HIGASHI, Y, KAWATA, H, ANDO, M

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Visualization of defects in GaAs by oxidation in water von FUKUTA, K, YASUAMI, S

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Au-Ge ohmic contact to n-GaAs by IR lamp alloying von YASUAMI, S, SAITO, Y, HOJO, A

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Interface study on GaAs-on-Si by transmission electron microscopy von NOZAKI, C, NARITSUKA, S, KOKUBUN, Y, YASUAMI, S

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Composition effect on CV profile and threshold voltage for MESFETs fabricated in undoped LEC SI GaAs von YASUAMI, S, FUKUTA, K, WATANABE, M, NAKANISI, T

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Preferential in-water oxidation around defects in undoped LEC semi-insulating GaAs wafers von YASUAMI, S, FUKUTA, K, NAKANISI, T

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Lattice bending in LEC-grown semi-insulating GaAs wafers von YASUAMI, S, MIKAMI, H, HOJO, A

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K–edge X–ray absorption spectra of argon in sputtered aluminum films von Takemura, Momoko, Satake, Hideki, Yasuami, Shigeru, Yoshiki, Masahiko, Kitajima, Yoshinori

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SEMICONDUCTOR DEVICE AND ITS MANUFACTURE von YASUAMI SHIGERU

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High Precision Lattice Spacing Measurement of GaAs Single Crystals von ANDO, Masami, YASUAMI, Shigeru

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JPS6229020B von YASUAMI SHIGERU

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Frontiers in Crystallography with Synchrotron Radiation. Utilizing of Various Properties of Synchrotron Radiation. High Precision Lattice Spacing Measurement of GaAs Single Crystal... von ANDO, Masami, YASUAMI, Shigeru

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MANUFACTURE OF FIELD EFFECT TYPE SEMICONDUCTOR DEVICE von YASUAMI SHIGERU

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MANUFACTURE OF SEMICONDUCTOR DEVICE von SATAKE HIDEKI, YASUAMI SHIGERU

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SPECTROMICROSCOPE von YASUAMI SHIGERU

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ANNEALING OF CRYSTAL von YASUAMI SHIGERU

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ELECTRICALLY CHARGED BEAM LITHOGRAPHER von YASUAMI SHIGERU

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X-RAY DIFFRACTION LATTICE von YASUAMI SHIGERU

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