Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals von Yassievich, I. N, Timmerman, D, Buma, W. J, Gregorkiewicz, T, de Boer, W. D. A. M, Dohnalová, K, Zhang, H

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Space-separated quantum cutting with silicon nanocrystals for photovoltaic applications von Timmerman, D, Izeddin, I, Stallinga, P, Yassievich, I. N, Gregorkiewicz, T

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Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties von Sreseli, O. M., Bert, N. A., Nevedomskii, V. N., Lihachev, A. I., Yassievich, I. N., Ershov, A. V., Nezhdanov, A. V., Mashin, A. I., Andreev, B. A., Yablonsky, A. N.

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Lattice deformation in silicon and germanium nanocrystals von Gert, A. V., Prokofiev, A. A., Yassievich, I. N.

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Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence von Andreev, B. A., Yablonskiy, A. N., Krasilnik, Z. F., Ershov, A. V., Grachev, D. A., Gert, A. V., Gusev, O. B., Yassievich, I. N.

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Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix von Belolipetsky, A V, Nestoklon, M O, Yassievich, I N

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Absorption of Si, Ge, and SiGe alloy nanocrystals embedded in SiO2 matrix von Avdeev, I. D., Belolipetsky, A. V., Ha, N. N., Nestoklon, M. O., Yassievich, I. N.

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New size effect in the catalysis by interacting copper nanoparticles von Rostovshchikova, T.N., Smirnov, V.V., Kozhevin, V.M., Yavsin, D.A., Zabelin, M.A., Yassievich, I.N., Gurevich, S.A.

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Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method von Belolipetskiy, A. V., Nestoklon, M. O., Yassievich, I. N.

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Role of surface self-trapped excitons in the energy relaxation of photoexcited silicon nanocrystals von Gert, A. V., Yassievich, I. N.

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Electroluminescence at 7 terahertz from phosphorus donors in silicon von Lv, P.-C., Troeger, R. T., Adam, T. N., Kim, S., Kolodzey, J., Yassievich, I. N., Odnoblyudov, M. A., Kagan, M. S.

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Effective Hamiltonian of silicene in the presence of electric and magnetic fields von Gert, A. V., Nestoklon, M. O., Yassievich, I. N.

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Tunnelling ionization of deep centres in high-frequency electric fields von Ganichev, S D, Yassievich, I N, Prettl, W

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Characterization of deep impurities in semiconductors by terahertz tunneling ionization von Ziemann, E., Ganichev, S. D., Prettl, W., Yassievich, I. N., Perel, V. I.

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Tight-binding simulation of silicon and germanium nanocrystals von Gert, A. V., Nestoklon, M. O., Prokofiev, A. A., Yassievich, I. N.

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Direct bandgap optical transitions in Si nanocrystals von Prokofiev, A. A., Moskalenko, A. S., Yassievich, I. N., de Boer, W. D. A. M., Timmerman, D., Zhang, H., Buma, W. J., Gregorkiewicz, T.

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Towards Si1−xGex quantum-well resonant-state terahertz laser von Altukhov, I. V., Chirkova, E. G., Sinis, V. P., Kagan, M. S., Gousev, Yu. P., Thomas, S. G., Wang, K. L., Odnoblyudov, M. A., Yassievich, I. N.

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Non-resonant excitation of rare-earth ions via virtual Auger process von Yassievich, I.N.

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Theory of interface roughness scattering in quantum wells von Penner, U, Rücker, H, Yassievich, I N

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Excitons in Si nanocrystals von Moskalenko, A. S., Yassievich, I. N.

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