Growth of large high-quality SiC single crystals von Ohtani, Noboru, Fujimoto, Tatsuo, Katsuno, Masakazu, Aigo, Takashi, Yashiro, Hirokatsu

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Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals von Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

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Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers von Nakabayashi, Masashi, Ohashi, Wataru, Tsuge, Hiroshi, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Satoh, S., Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo

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Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications von Nakabayashi, Masashi, Tsuge, Hiroshi, Ohtani, Noboru, Hoshino, Taizo, Aigo, Takashi, Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo, Tatsumi, Kohei

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Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates von Nakabayashi, Masashi, Ohashi, Wataru, Tsuge, Hiroshi, Ohtani, Noboru, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo

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Dislocation processes during SiC bulk crystal growth von Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

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Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation von Katsuno, Masakazu, Ohtani, Noboru, Takahashi, Jun, Yashiro, Hirokatsu, Kanaya, Masatoshi

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Investigation of heavily nitrogen-doped n + 4H–SiC crystals grown by physical vapor transport von Ohtani, Noboru, Katsuno, Masakazu, Nakabayashi, Masashi, Fujimoto, Tatsuo, Tsuge, Hiroshi, Yashiro, Hirokatsu, Aigo, Takashi, Hirano, Hosei, Hoshino, Taizo, Tatsumi, Kohei

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Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC von Onoue, Kozo, Nishikawa, Takeshi, Katsuno, Masakazu, Ohtani, Noboru, Hirokatsu Yashiro, Hirokatsu Yashiro, Masatoshi Kanaya, Masatoshi Kanaya

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Growth and Defect Reduction of Bulk SiC Crystals von Yashiro, Hirokatsu, Katsuno, Masakazu, Fujimoto, Tatsuo, Ohtani, Noboru, Aigo, Takashi

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Impurity incorporation kinetics during modified-Lely growth of SiC von Ohtani, Noboru, Katsuno, Masakazu, Takahashi, Jun, Yashiro, Hirokatsu, Kanaya, Masatoshi

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A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals von Tsuge, Hiroshi, Yano, Takayuki, Sato, Shinya, Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo

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Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4º Off-Axis 4H-SiC Substrates von Ito, Wataru, Tsuge, Hiroshi, Yano, Takayuki, Aigo, Takashi, Yashiro, Hirokatsu, Katsuno, Masakazu, Fujimoto, Tatsuo

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Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4[degrees] Off-Axis 4H-SiC Substrates von Aigo, Takashi, Ito, Wataru, Tsuge, Hiroshi, Yashiro, Hirokatsu, Katsuno, Masakazu, Fuiimoto, Tatsuo, Yano, Takayuki

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4H-SiC Epitaxial Growth on 2° Off-Axis Substrates using Trichlorosilane (TCS) von Ito, Wataru, Ohashi, Wataru, Tsuge, Hiroshi, Aigo, Takashi, Yashiro, Hirokatsu, Katsuno, Masakazu, Fujimoto, Tatsuo

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Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors von Aigo, Takashi, Katsuno, Masakazu, Fujimoto, Tatsuo, Yashiro, Hirokatsu, Ohtani, Noboru

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Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals von Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Nakabayashi, Masashi, Tsuge, Hiroshi, Yashiro, Hirokatsu, Aigo, Takashi, Hirano, Hosei, Hoshino, Taizo, Ohashi, Wataru

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Nitrogen Incorporation Mechanism and Dependence of Site-Competition Epitaxy on the Total Gas Flow Rate for 6H-SiC Epitaxial Layers Grown by Chemical Vapor Deposition von Aigo, Takashi, Kanaya, Masatoshi, Katsuno, Masakazu, Yashiro, Hirokatsu, Ohtani, Noboru

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Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals von Ohashi, Wataru, Tsuge, Hiroshi, Yano, Takayuki, Yashiro, Hirokatsu, Sato, Shinya, Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo

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Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities von Nakabayashi, Masashi, Tsuge, Hiroshi, Ohtani, Noboru, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Katsuno, Masakazu, Hirano, Hosei, Fujimoto, Tatsuo, Tatsumi, Kohei

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