1.1-$\mu$m-Range High-Speed Tunnel Junction Vertical-Cavity Surface-Emitting Lasers von Yashiki, K., Suzuki, N., Fukatsu, K., Anan, T., Hatakeyama, H., Tsuji, M.

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Wavelength-selectable light sources fabricated using advanced microarray-selective epitaxy von Yashiki, K., Sato, K., Morimoto, T., Sudo, S., Naniwae, K., Satoshi Ae, Shiba, K., Suzuki, N., Sasaki, T., Kudo, K.

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1.55-μm wavelength-selectable microarray DFB-LD's with monolithically integrated MMI combiner, SOA, and EA-modulator von Kudo, K., Yashiki, K., Sasaki, T., Yokoyama, Y., Hamamoto, K., Morimoto, T., Yamaguchi, M.

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25 Gbit/s operation of InGaAs-based VCSELs von SUZUKI, N, HATAKEYAMA, H, FUKATSU, K, ANAN, T, YASHIKI, K, TSUJI, M

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25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs von HATAKEYAMA, H, AKAGAWA, T, FUKATSU, K, SUZUKI, N, TOKUTOME, K, YASHIKI, K, ANAN, T, TSUJI, M

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Wavelength-selectable microarray light sources for S-, C-, and L-band WDM systems von Hatakeyama, H., Naniwae, K., Kudo, K., Suzuki, N., Sudo, S., Ae, S., Muroya, Y., Yashiki, K., Satoh, K., Morimoto, T., Mori, K., Sasaki, T.

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10-Gb/s 23-km penalty-free operation of 1310-nm uncooled EML with semi-insulating BH structure von Yashiki, K., Kato, T., Chida, H., Tsuruoka, K., Kobayashi, R., Sudo, S., Sato, K., Kudo, K.

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Wavelength-selectable microarray light sources of multiple ranges simultaneously fabricated on single wafer von Kudo, K, Morimoto, T, Yashiki, K, Sasaki, T, Yokoyama, Y, Hamamoto, K, Yamaguchi, M

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Dynamic and static hydrogen effects on mechanical properties in Vanadium alloys von Ohnuki, S, Yasuda, T, Yashiki, K, Suda, T, Watanabe, S

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Multirange wavelength-selectable microarray light sources simultaneously fabricated on a wafer covering the entire C-Band von Kudo, K., Yashiki, K., Morimoto, T., Hisanaga, Y., Sudo, S., Muroya, Y., Tamanuki, T., Hatakeyama, H., Mori, K., Sasaki, T.

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20Gbps/ch optical interconnection between SERDES devices over distances from chip-to-chip to rack-to-rack von Sakai, J., Noda, A., Yamagishi, M., Ohtsuka, T., Sunaga, K., Sugita, H., Takahashi, H., Oda, M., Ono, H., Yashiki, K., Kouta, H.

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Sulfidation- and oxidation-resistant alloys prepared by sputter deposition von Habazaki, H, Hon-yashiki, K, Ito, K, Mitsui, H, Kawashima, A, Asami, K, Hashimoto, K, Mrowec, S

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High-speed VCSELs von Suzuki, N., Hatakeyama, H., Yashiki, K., Fukatsu, K., Tokutome, K., Akagawa, T., Anan, T., Tsuji, M.

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Wavelength-independent operation of EA-modulator integrated wavelengthselectable microarray light sources von Yashiki, K., Kudo, K., Morimoto, T., Sudo, S., Muroya, Y., Tamanuki, T., Ishizaka, M., Hosoda, T., Furushima, Y., Hatakeyama, H., Yokoyama, Y., Mori, K., Sasaki, T., Yamaguchi, M.

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30 Gb/s Over 100-m MMFs Using 1.1- \mu m Range VCSELs and Photodiodes von Fukatsu, K., Shiba, K., Suzuki, Y., Suzuki, N., Anan, T., Hatakeyama, H., Yashiki, K., Tsuji, M.

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The sulfidation and oxidation behavior of sputter-deposited AlNbMo alloys von Hon-yashiki, K, Habazaki, H, Akiyama, E, Kawashima, A, Asami, K, Hashimoto, K, Mrowec, S

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25 Gbit/s 100 degree C operation of highly reliable InGaAs/GaAsP-VCSELs von Hatakeyama, H, Akagawa, T, Fukatsu, K, Suzuki, N, Tokutome, K, Yashiki, K, Anan, T, Tsuji, M

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25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs von Hatakeyama, H, Akagawa, T, Fukatsu, K, Suzuki, N, Tokutome, K, Yashiki, K, Anan, T, Tsuji, M

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30 Gb/s Over 100-m MMFs Using 1.1-[Formula Omitted]m Range VCSELs and Photodiodes von Fukatsu, K, Shiba, K, Suzuki, Y, Suzuki, N, Anan, T, Hatakeyama, H, Yashiki, K, Tsuji, M

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High-speed 1.1-μm-range InGaAs VCSELs von Anan, T, Suzuki, N, Yashiki, K, Fukatsu, K, Hatakeyama, H, Akagawa, T, Tokutome, K, Tsuji, M

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