Effects of high-dose hydrogen implantation on defect formation and dopant diffusion in silver implanted ZnO crystals von Yaqoob, Faisal, Huang, Mengbing

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Lattice site specific diffusion properties for substitutional and interstitial impurity atoms in ZnO crystals von Yaqoob, Faisal, Huang, Mengbing

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Correction of Thermal Errors in Machine Tools by a Hybrid Model Approach von Friedrich, Christian, Geist, Alexander, Yaqoob, Muhammad Faisal, Hellmich, Arvid, Ihlenfeldt, Steffen

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Effects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon von Naczas, Sebastian, Yaqoob, Faisal, Huang, Mengbing

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Displacive radiation-induced structural contraction in nanocrystalline ZrN von Lu, Fengyuan, Huang, Mengbing, Yaqoob, Faisal, Lang, Maik, Namavar, Fereydoon, Trautmann, Christina, Sun, Hongtao, Ewing, Rodney C., Lian, Jie

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Concept of Integrating a Hybrid Thermal Error Compensation Into an Existing Machine Tool Control Architecture von Geist, Alexander, Yaqoob, Muhammad Faisal, Friedrich, Christian, Naumann, Christian, Ihlenfeldt, Steffen

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Displacive radiation-induced structural contraction in nanocrystalline ZrN von Lu, Fengyuan, Huang, Mengbing, Yaqoob, Faisal, Lang, Maik, Namavar, Fereydoon, Trautmann, Christina, Sun, Hongtao, Ewing, Rodney C., Lian, Jie

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Displacive radiation-induced structural contraction in nanocrystalline ZrN von Lu Fengyuan, Sun Hongtao, Lian Jie, Huang, Mengbing, Yaqoob, Faisal, Lang, Maik, Ewing, Rodney C., Namavar, Fereydoon, Trautmann, Christina, Technische Universitaet Darmstadt, 64289 Darmstadt

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Debye shielding distortion of dust grains in dusty plasmas von Yaqoob, Faisal, Ali, Shahid, Murtaza, G., Nasim, M. H.

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ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES von Yang, Dengliang, Zhu, Ji, Park, Pilyeon, Chang, Hsiao-Eei, EASON, Kwame, Angelov, Ivelin, Park, Joon Hong, Kawaguchi, Mark, Yaqoob, Faisal

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Isotropic atomic layer etch for silicon oxides using no activation von Park, Pilyeon, Berry, III, Ivan L, Yaqoob, Faisal

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Ultrahigh selective nitride etch to form FinFET devices von Yang, Dengliang, Zhu, Ji, Park, Pilyeon, Angelov, Ivelin, Park, Joon Hong, Kawaguchi, Mark, Chang, Hsiao-Wei, Yaqoob, Faisal, Eason, Kwame

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ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT von Yang, Dengliang, Park, Joon Hong, Yaqoob, Faisal, Eason, Kwame

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Ultrahigh selective polysilicon etch with high throughput von Yang, Dengliang, Park, Joon Hong, Yaqoob, Faisal, Eason, Kwame

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SYSTEMS AND METHODS FOR ULTRAHIGH SELECTIVE NITRIDE ETCH von YANG DENGLIANG, PARK PILYEON, ZHU HELEN H, PARK JOON HONG, YAQOOB FAISAL

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Systems and methods for ultrahigh selective nitride etch von Yang, Dengliang, Park, Pilyeon, Zhu, Helen H, Park, Joon Hong, Yaqoob, Faisal

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METHOD FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICON NITRIDE von BERRY IVAN L, ANGELOV IVELIN A, ZHU HELEN H, PARK PIL YEON, PARK JOON HONG, YAQOOB FAISAL, MARQUEZ LINDA

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ISOTROPIC ATOMIC LAYER ETCH FOR SILICON OXIDES USING NO ACTIVATION von Berry, III Ivan L, Yaqoob Faisal, Park Pilyeon

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Isotropic atomic layer etch for silicon oxides using no activation von Berry, III Ivan L, Yaqoob Faisal, Park Pilyeon

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ISOTROPIC ATOMIC LAYER ETCH FOR SILICON OXIDES USING NO ACTIVATION von PARK PILYEON, BERRY, III IVAN L, YAQOOB FAISAL

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