Observation of a new Al(111)/Si(111) orientational epitaxy von Yapsir, A. S., Choi, C.-H., Lu, T.-M.

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Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition von CHOI, C.-H, HARPER, R. A, YAPSIR, A. S, LU, T.-M

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Effects of hydrogen ion implantation on Al/Si Schottky diodes von YAPSIR, A. S, HADIZAD, P, LU, T.-M, CORELLI, J. C, LANFORD, W. A, BAKHRU, H

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Electromigration in Al/SiO2 films prepared by a partially ionized beam deposition technique von LI, P, YAPSIR, A. S, RAJAN, K, LU, T.-M

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X-ray photoemission and raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching von YAPSIR, A. S, OEHRLEIN, G. S, FORTUNO-WILTSHIRE, G, TSANG, J. C

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Reduction of interface hydrogen content by partially ionized beam deposition technique von YAPSIR, A. S, LU, T.-M, LANFORD, W. A

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Formation of low-temperature Al/n-Si Schottky contacts using a partially ionized beam deposition technique von YAPSIR, A. S, BAI, P, LU, T.-M

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Effects of deuterium plasmas on silicon near-surface properties von LINDSTRÖM, J. L, OEHRLEIN, G. S, SCILLA, G. J, YAPSIR, A. S, CORBETT, J. W

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Channeling study of structural effects at the Al(111)/Si(111) interface formed by ionized cluster beam deposition von JIN, H.-S, YAPSIR, A. S, LU, T.-M, GIBSON, W. M, YAMADA, I, TAKAGI, T

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Electrical characteristics of hydrogen implanted silicon Schottky diodes having large difference in metal work function von YAPSIR, A. S, LU, T.-M, HADIZAD, P, CORELLI, J. C, SUGERMAN, A, BAKHRU, H

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Channeling study of epitaxial Al and Ag films on Si(111) substrates von Jin, H.-S., Park, K.-H., Yapsir, A.S., Wang, G.-C., Lu, T.-M., Luo, L., Gibson, W.M., Yamada, I., Takagi, T.

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PtSi/n-type Si Schottky barrier height change by H + ion implantation near the interface region von Hadizad, P., Yapsir, A.S., Lu, T.-M., Corelli, J.C., Sugerman, A.

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Direct observation of an incommensurate solid-solid interface von Lu, T, Bai, P, Yapsir, AS, Chang, P, Shaffner, TJ

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Defect centers and changes in the electrical characteristics of Al/n-type Si Schottky diodes induced by hydrogen-ion implantations von YAPSIR, A. S, HADIZAD, P, LU, T.-M, CORELLI, J. C, CORBETT, J. W, LANFORD, W. A, BAKHRU, H

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Hydrogen passivation of a substitutional sulfur defect in silicon von YAPSIR, A. S, DEAK, P, SINGH, R. K, SNYDER, L. C, CORBETT, J. W, LU, T.-M

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KEPRIBADIAN DAN KECELAKAAN LALU LINTAS von Yapsir G Wirawan

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Kepercayaan Epistemologis dan Faktor-faktor yang Memengaruhinya von M. Nur Ghufron, Asmadi Alsa, Yapsir Gandhi Wirawan

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Keterlibatan Siswa (Student Engagement) sebagai Mediator Kompetensi Emosi dan Prestasi Akademik von I Wayan Dharmayana, - Masrun, Amitya Kumara, Yapsir G Wirawan

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CMOS-on-SOI ESD protection networks von Voldman, S., Schulz, R., Howard, J., Gross, V., Wu, S., Yapsir, A., Sadana, D., Hovel, H., Walker, J., Assaderaghi, F., Chen, B., Sun, J.Y-C., Shahidi, G.

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Channeling Study of Epitaxial Aluminium and Silver Films on Si(111) Substrates von Jin, H-S, Park, K-H, Yapsir, A S

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