Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution von Tan, Yaohua P., Povolotskyi, Michael, Kubis, Tillmann, Boykin, Timothy B., Klimeck, Gerhard

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First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding von Tan, Yaohua, Chen, Fan W., Ghosh, Avik W.

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Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials von Ilatikhameneh, Hesameddin, Tan, Yaohua, Novakovic, Bozidar, Klimeck, Gerhard, Rahman, Rajib, Appenzeller, Joerg

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Colossal tunability in high frequency magnetoelectric voltage tunable inductors von Yan, Yongke, Geng, Liwei D., Tan, Yaohua, Ma, Jianhua, Zhang, Lujie, Sanghadasa, Mohan, Ngo, Khai, Ghosh, Avik W., Wang, Yu U., Priya, Shashank

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A multiscale materials-to-systems modeling of polycrystalline PbSe photodetectors von Ganguly, Samiran, Jang, Moon-Hyung, Tan, Yaohua, Yoo, Sung-Shik, Gupta, Mool C., Ghosh, Avik W.

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Modeling tunnel field effect transistors—From interface chemistry to non-idealities to circuit level performance von Ahmed, Sheikh Z., Tan, Yaohua, Truesdell, Daniel S., Calhoun, Benton H., Ghosh, Avik W.

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Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition von Zheng, Jiyuan, Jones, Andrew H., Tan, Yaohua, Rockwell, Ann K., March, Stephen, Ahmed, Sheikh Z., Dukes, Catherine A., Ghosh, Avik W., Bank, Seth R., Campbell, Joe C.

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Surface Passivation in Empirical Tight Binding von Yu He, Yaohua Tan, Zhengping Jiang, Povolotskyi, Michael, Klimeck, Gerhard, Kubis, Tillmann

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Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures von Sengupta, Parijat, Kubis, Tillmann, Tan, Yaohua, Klimeck, Gerhard

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Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction von Zhengping Jiang, Yeqing Lu, Yaohua Tan, Yu He, Povolotskyi, Michael, Kubis, Tillmann, Seabaugh, Alan C., Fay, Patrick, Klimeck, Gerhard

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A Two-Dimensional Analysis Method on STI-Aware Layout-Dependent Stress Effect von Li, Xiaojian, Ye, Zuochang, Tan, Yaohua, Wang, Yan

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Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon von Tan, Yaohua, Li, Xiaojian, Tian, Lilin, Yu, Zhiping

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Machine learning electron correlation in a disordered medium von Ma, Jianhua, Zhang, Puhan, Tan, Yaohua, Ghosh, Avik W., Chern, Gia-Wei

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Full band Monte Carlo simulation of AlInAsSb digital alloys von Zheng, Jiyuan, Ahmed, Sheikh Z., Yuan, Yuan, Jones, Andrew, Tan, Yaohua, Rockwell, Ann K., March, Stephen D., Bank, Seth R., Ghosh, Avik W., Campbell, Joe C.

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Enabling Variability-Aware Design-Technology Co-Optimization for Advanced Memory Technologies von M. Amoroso, Salvatore, Asenov, Plamen, Lee, Jaehyun, Kim, Nara, Lee, Ko-Hsin, Tan, Yaohua, Oh, Yong-Seog, Smith, Lee, Lin, Xi-Wei, Moroz, Victor

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Switching Mechanism and the Scalability of Vertical-TFETs von Chen, Fan, Ilatikhameneh, Hesameddin, Tan, Yaohua, Klimeck, Gerhard, Rahman, Rajib

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Anomalous heat flow in 8-Pmmn borophene with tilted Dirac cones von Sengupta, Parijat, Tan, Yaohua, Bellotti, Enrico, Shi, Junxia

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First principles study and empirical parametrization of twisted bilayer MoS 2 based on band-unfolding von Tan, Yaohua, Chen, Fan W., Ghosh, Avik W.

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Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass von Ilatikhameneh, Hesameddin, Ameen, Tarek, Novakovic, Bozidar, Tan, Yaohua, Klimeck, Gerhard, Rahman, Rajib

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Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors von Sengupta, Parijat, Tan, Yaohua, Klimeck, Gerhard, Shi, Junxia

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