Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC von Bai, Q., Li, L., Cheng, F.F., Bin, R., Fa, T., Fu, E., Yao, S.D.

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Determination of tetragonal distortion of Al 0.69In 0.09Ga 0.22N/GaN heterostructure by RBS/C and HRXRD von Fa, T., Chen, T.X., Yao, S.D.

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HIGH-ENERGY PROTON IRRADIATION EFFECTS ON GaAs/Ge SPACE SOLAR CELLS von R. Wang S.D. Yao

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Optimizing the growth of CoSi 2 film with oxide-mediated CoSi 2 template by silicon cap layer von Xu, M., Vantomme, A., Smeets, D., Vanormelingen, K., Yao, S.D.

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Determination of tetragonal distortion of Al0.69In0.09Ga0.22N/GaN heterostructure by RBS/C and HRXRD von Fa, T., Chen, T.X., Yao, S.D.

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Characterization and local magnetic modification of ion irradiated GaMnAs von Li, Lin, Yao, S.D., Roshchupkina, O., Prucnal, S., Akhmadaliev, S., Campion, R.P., Rushforth, A.W., Fassbender, J., Helm, M., Gallagher, B.L., Timm, C., Schmidt, H., Zhou, Shengqiang

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Optimizing the growth of CoSi2 film with oxide-mediated CoSi2 template by silicon cap layer von XU, M, VANTOMME, A, SMEETS, D, VANORMELINGEN, K, YAO, S. D

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The Photoluminescence from (Eu, Yb) Co-Doped Silicon-Rich Si Oxides von Yao, S.D., Pan, H.P., Finstad, Terje G., Ren, X.Q., Yin, P.G., Zhang, Qi Wei, Heng, Cheng Lin, Su, Wen Yong

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VALIDATION OF MORPHOLOGICAL CRITERIA FOR CLONAL IDENTIFICATION IN BUDWOOD GARDENS OF RUBBER TREE (HEVEA BRASILIENSIS MUELL. ARG.) CLONES USING MICROSATELLITE MARKERS von Kouakou, H. Michel, Elabo, A.A. Eliathe, Fofana, I. Jésus, Pokou, N. Désiré, N’guetta, A. Simon-Pierre, Gnagne, Y. Michel, Yapi, A. Freddy, S.D. Martial, Yao, Diarrassouba, Nafan, Obouayeba, Samuel

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Chemical composition and elastic strain in AlInGaN quaternary films von Zhou, Shengqiang, Wu, M.F., Yao, S.D., Liu, J.P., Yang, H.

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Growth of oxide-mediated ternary silicide controlled by a Si cap layer by rapid thermal annealing von Xu, M, Vantomme, André, Vanormelingen, K, Yao, S.D

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The strain reduction and quality improvement in ZnO film by a 30{sup o} in-plane rotation with respect to the Al{sub 2}O{sub 3} substrate von Zhou Shengqiang, Wu, M.F., Yao, S.D., Lu, Y.M., Liu, Y.C.

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The strain reduction and quality improvement in ZnO film by a 30° in-plane rotation with respect to the Al2O3 substrate von Zhou, Shengqiang, Wu, M.F., Yao, S.D., Lu, Y.M., Liu, Y.C.

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The strain reduction and quality improvement in ZnO film by a 30° in-plane rotation with respect to the Al 2O 3 substrate von Zhou, Shengqiang, Wu, M.F., Yao, S.D., Lu, Y.M., Liu, Y.C.

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Interaction of phenolic antioxidants and hydroxyl radicals von Wang, W.F., Luo, J., Yao, S.D., Lian, Z.R., Zhang, J.S., Lin, N.Y., Fang, R.Y., Hu, T.X.

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Growth of oxide-mediated ternary silicide controlled by a Si cap layer by rapid thermal annealing von Xu, M., Vantomme, A., Vanormelingen, K., Yao, S.D.

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All-epitaxial growth of single-crystalline Ba 0.6Sr 0.4TiO 3/Ir/MgO/Si heterostructures von Chen, T.L., Li, X.M., Wu, W.B., Yao, S.D., Wang, K.

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Ohmic contact mechanism of Ni/Au contact to p-type GaN studied by Rutherford backscattering spectrometry von Hu, C.Y., Ding, Z.B., Qin, Z.X., Chen, Z.Z., Xu, K., Yang, Z.J., Shen, B., Yao, S.D., Zhang, G.Y.

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An approach to determine the chemical composition in InGaN/GaN multiple quantum wells von Zhou, S.Q., Wu, M.F., Hou, L.N., Yao, S.D., Ma, H.J., Nie, R., Tong, Y.Z., Yang, Z.J., Yu, T.J., Zhang, G.Y.

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All-epitaxial growth of single-crystalline Ba0.6Sr0.4TiO3/Ir/ MgO/Si heterostructures von CHEN, T. L, LI, X. M, WU, W. B, YAO, S. D, WANG, K

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