High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC von Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.

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High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC von Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.

Volltext

High performance 0.14 [micro]m gate-length AlGaN/GaN power HEMTs on SiC von Jessen, G.H, Fitch, R.C, Gillespie, J.K, Via, G.D, Moser, N.A, Yannuzzi, M.J, Crespo, A, Sewell, J.S, Dettmer, R.W, Jenkins, T.J, Davis, R.F, Yang, J, Khan, M.A, Binari, S.C

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Gate optimization of AlGaN/GaN HEMTs using WSi, Ir, Pd, and Ni Schottky contacts von Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Dettmer, R.W., Jenkins, T.J.

Volltext