ATTENUATED TOTAL REFLECTION SPECTRA OF NITRIDED Si[O.sub.2]/Si STRUCTURES von Odzhaev, V.B, Pyatlitski, A.N, Prosolovich, V.S, Kovalchuk, N.S, Soloviev, Ya. A, Zhygulin, D.V, Shestovsky, D.V, Yankovski, Yu.N, Brinkevich, D.I

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Formation of radiation defects in silicon at high-energy implantation von Brinkevich, D.I., Odzhaev, V.B., Prosolovich, V.S., Yankovski, Yu.N.

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Germanium-doped epitaxial silicon layers for SHF ICs von Brinkevich, D.I., Prosolovich, V.S., Yankovski, O.N., Yankovski, Yu.N.

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MOS-transistors on the Si:Ho in the technology of SHF-devices von Samokhval, V.V., Brinkevich, D.I., Prosolovich, V.S., Yankovski, Yu.N.

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Optimization of SHF-diode parameters by ionizing radiation von Prosolovich, V.S., Yankovski, Yu.N., Brinkevich, D.I.

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Lanthanides application in planar technology of microwave devices production von Brinkevich, D.I., Prosolovich, V.S., Yankovski, Yu.N.

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SHF-transistors parameters optimization by germanium doping of silicon monocrystal von Afanas'ev, V.V., Brinkevich, D.I., Korzhenevski, A.G., Prosolovich, V.S., Yankovski, Yu.N.

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