Attenuated Total Reflection Spectra of Nitrided SiO2/Si Structures von Odzhaev, V. B., Pyatlitski, A. N., Prosolovich, V. S., Kovalchuk, N. S., Soloviev, Ya. A., Zhygulin, D. V., Shestovsky, D. V., Yankovski, Yu. N., Brinkevich, D. I.

Volltext

Radiation-Stimulated Transformation of the Reflectance Spectra of Diazoquinone–Novolac Photoresist Films Implanted with Antimony Ions von Kharchenko, A. A., Brinkevich, D. I., Prosolovich, V. S., Brinkevich, S. D., Odzaev, V. B., Yankovski, Yu. N.

Volltext

MEASUREMENT OF MICROHARDNESS OF PHOTORESIST FILMS ON SILICON BY THE SCRATCHING METHOD von Brinkevich, D. I., Prosolovich, V. S., Yankovski, Yu. N., Vabishchevich, S. A., Vabishchevich, N. V., Gaishun, V. E.

Volltext

MEASUREMENT OF MICROHARDNESS OF PHOTORESIST FILMS ON SILICON BY THE SCRATCHING METHOD von D. I. Brinkevich, V. S. Prosolovich, Yu. N. Yankovski, S. A. Vabishchevich, N. V. Vabishchevich, V. E. Gaishun

Volltext

Features of formation of active areas of n-p-n-transistors for submicronic integrated microcircuits von Belous, V A, Brinkevich, D I, Prosolovich, V S, Chernyi, V V, Yankovski, Yu N

Volltext bestellen

Formation of radiation defects in silicon at high-energy implantation von Brinkevich, D.I., Odzhaev, V.B., Prosolovich, V.S., Yankovski, Yu.N.

Volltext

Germanium-doped epitaxial silicon layers for SHF ICs von Brinkevich, D.I., Prosolovich, V.S., Yankovski, O.N., Yankovski, Yu.N.

Volltext bestellen

MOS-transistors on the Si:Ho in the technology of SHF-devices von Samokhval, V.V., Brinkevich, D.I., Prosolovich, V.S., Yankovski, Yu.N.

Volltext bestellen

Lanthanides application in planar technology of microwave devices production von Brinkevich, D.I., Prosolovich, V.S., Yankovski, Yu.N.

Volltext bestellen

Optimization of SHF-diode parameters by ionizing radiation von Prosolovich, V.S., Yankovski, Yu.N., Brinkevich, D.I.

Volltext bestellen

SHF-transistors parameters optimization by germanium doping of silicon monocrystal von Afanas'ev, V.V., Brinkevich, D.I., Korzhenevski, A.G., Prosolovich, V.S., Yankovski, Yu.N.

Volltext bestellen

Electrophysical characteristics of power MOSFETs additionally implanted with nitrogen ions von Odzaev, Vladimir B., Pyatlitski, Aliaksandr N., Prasalovich, Uladislau S., Kovalchuk, Natalya S., Soloviev, Yaroslav A., Shestovski, Dmitry V., Yavid, Valentin Yu, Yankovski, Yuri N.

Volltext