Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals von Nazarov, A., Sun, J. M., Skorupa, W., Yankov, R. A., Osiyuk, I. N., Tjagulskii, I. P., Lysenko, V. S., Gebel, T.

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Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers von Rebohle, L., von Borany, J., Yankov, R. A., Skorupa, W., Tyschenko, I. E., Fröb, H., Leo, K.

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Reactive plasma immersion ion implantation for surface passivation von Yankov, R.A., Shevchenko, N., Rogozin, A., Maitz, M.F., Richter, E., Möller, W., Donchev, A., Schütze, M.

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Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applications von Rebohle, L., Gebel, T., Yankov, R.A., Trautmann, T., Skorupa, W., Sun, J., Gauglitz, G., Frank, R.

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Surface protection of titanium and titanium–aluminum alloys against environmental degradation at elevated temperatures von Yankov, R.A., Kolitsch, A., von Borany, J., Mücklich, A., Munnik, F., Donchev, A., Schütze, M.

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Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes von NAZAROV, A. N, OSIYUK, I. N, SUN, J. M, YANKOV, R. A, SKORUPA, W, TYAGULSKII, I. P, LYSENKO, V. S, PRUCNAL, S, GEBEL, T, REBOHLE, L

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Room-temperature, short-wavelength (400–500 nm) photoluminescence from silicon-implanted silicon dioxide films von Skorupa, W., Yankov, R. A., Tyschenko, I. E., Fröb, H., Böhme, T., Leo, K.

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Formation of light-emitting Si nanostructures in SiO2 by pulsed anneals von Kachurin, G A, Cherkova, S G, Marin, D V, Yankov, R A, Deutschmann, M

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Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon von Kvit, A., Yankov, R. A., Duscher, G., Rozgonyi, G., Glasko, J. M.

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Comparative Study of Charge Trapping in High-Dose Si and Ge-Implanted Al/SiO2/Si Structures von Nazarov, A, Skorupa, W, Osiyuk, I N, Tjagulskii, I P, Lysenko, V S, Yankov, R A, Gebel, T

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Carbon-mediated effects in silicon and in silicon-related materials von Skorupa, W., Yankov, R.A.

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The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures von Nazarov, A.N., Vovk, J.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Skorupa, W., Yankov, R.A.

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Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide von Nazarov, A., Osiyuk, I., Tyagulskii, I., Lysenko, V., Prucnal, S., Sun, J., Skorupa, W., Yankov, R.A.

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Damage in silicon carbide induced by Rutherford backscattering analysis von Fukarek, W, Yankov, R.A, Anwand, W, Heera, V

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Effect of elevated substrate temperature on growth, properties, and structure of indium tin oxide films prepared by reactive magnetron sputtering von Rogozin, A., Vinnichenko, M., Shevchenko, N., Vazquez, L., Mücklich, A., Kreissig, U., Yankov, R.A., Kolitsch, A., Möller, W.

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Wave-ordered structures formed on SOI wafers by reactive ion beams von Smirnov, V.K., Kibalov, D.S., Krivelevich, S.A., Lepshin, P.A., Potapov, E.V., Yankov, R.A., Skorupa, W., Makarov, V.V., Danilin, A.B.

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Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile von Kögler, R., Yankov, R.A., Posselt, M., Danilin, A.B., Skorupa, W.

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Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing von TYSCHENKO, I. E, ZHURAVLEV, K. S, VANDYSHEV, E. N, MISIUK, A, REBOHLE, L, SKORUPA, W, YANKOV, R. A, POPOV, V. P

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Trans-projected-range effect in proximity gettering of impurities in silicon von Gueorguiev, Y.M, Kögler, R, Peeva, A, Panknin, D, Mücklich, A, Yankov, R.A, Skorupa, W

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Comparative Study of SIMOX Structures Using Four Analytical Techniques von Fukarek, W., Yankov, R. A., Skorupa, W.

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