Field-Effect Mobility of InAs Surface Channel nMOSFET With Low D Scaled Gate-Stack von Shih-Wei Wang, Vasen, Timothy, Doornbos, Gerben, Oxland, Richard, Shang-Wen Chang, Xu Li, Contreras-Guerrero, Rocio, Holland, Martin, Chien-Hsun Wang, Edirisooriya, Madhavie, Rojas-Ramirez, Juan Salvador, Ramvall, Peter, Thoms, Stephen, Macintyre, Douglas S., Vellianitis, Georgios, Hsieh, Gordon C. H., Yang-Sih Chang, Yin, Kaimin M., Yee-Chia Yeo, Diaz, Carlos H., Droopad, Ravi, Thayne, Iain G., Passlack, Matthias

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