Adaptive Torque Estimation for an IPMSM with Cross-Coupling and Parameter Variations von Yang, Dooyoung, Mok, Hyungsoo, Lee, Jusuk, Han, Soohee

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Electrical characteristics of an ultrathin (1.6 nm) TaOxNy gate dielectric von Jung, Hyungsuk, Im, Kiju, Hwang, Hyunsang, Yang, Dooyoung

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Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5 von Jung, Hyungsuk, Im, Kiju, Yang, Dooyoung, Hwang, Hyunsang

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Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD) 3 (OD=octanedionate) von Lee, Jung-Hyun, Kim, Joo-Young, Rhee, Shi-Woo, Yang, DooYoung, Kim, Dong-Hyun, Yang, Cheol-Hoon, Han, Young-Ki, Hwang, Chul-Ju

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ELECTRICAL AND RELIABILITY CHARACTERISTICS OF AN ULTRATHIN TaOxNy GATE DIELECTRIC PREPARED BY O3 ANNEALING von Jung, H, Sim, H, Im, K, Yang, D, Hwang, H

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Controller for setting control parameter von DOOYOUNG YANG

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Producting apparatus for setting control parameter and determining quality of controller von DOOYOUNG YANG

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BRAKE APPARATUS AND METHOD OF CONTROLLING THE SAME von Yang, Dooyoung, Joo, Kyoungjin, JO, Taeho, Jang, Mijeong

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Analysis of mechanisms for hot-carrier-induced VLSI circuit degradation von HUH, Y, YANG, D, L'YEE, H, SUNG, Y

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Electrical and reliability characteristics of an ultrathin TaO sub(x)N sub(y) gate dielectric prepared by ND sub(3) annealing of Ta sub(2)O sub(5) von Jung, Hyungsuk, Im, Kiju, Yang, Dooyoung, Hwang, Hyunsang

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Electrical and reliability characteristics of an ultrathin TaO x N y gate dielectric prepared by ND 3 annealing of Ta 2 O 5 von Hyungsuk Jung, Kiju Im, Dooyoung Yang, Hyunsang Hwang

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Electrical and reliability characteristics of an ultrathin TaO(x)N/y/ gate dielectric prepared by ND(3) annealing of Ta(2)O(5) von Jung, Hyungsuk, Im, Kiju, Yang, Dooyoung, Hwang, Hyunsang

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brake apparatus and controlling method thereof von MIJEONG JANG, KYOUNGJIN JOO, TAEHO JO, DOOYOUNG YANG

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BREMSVORRICHTUNG UND VERFAHREN ZUM STEUERN DERSELBEN von Yang, Dooyoung, Joo, Kyoungjin, Jo, Taeho, Jang, Mijeong

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Electrical and Reliability Characteristics of an Ultrathin TaO x N y Gate Dielectric Prepared by O 3 Annealing von Jung, Hyungsuk, Sim, Hyunjun, Im, Kiju, Yang, Dooyoung, Hwang, Hyunsang

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Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD) sub(3) (OD identical with octanedionate) von Lee, Jung-Hyun, Kim, Joo-Young, Rhee, Shi-Woo, Yang, DooYoung, Kim, Dong-Hyun, Yang, Cheol-Hoon, Han, Young-Ki, Hwang, Chul-Ju

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Analysis of circuit degradation due to hot-carrier effects in 64Mb DRAMs von Huh, Yoonjong, Yang, Dooyoung, Sung, Yungkwon

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Hot-carrier-induced gate capacitance variation and its impact on DRAM circuit functionality von Yoonjong Huh, Hyeokjae Lee, Jae-Gyung Ahn, Dooyoung Yang, Yungkwon Sung

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A new leakage component caused by the interaction of residual stress and the relative position of poly-Si gate at isolation edge von Hyeokjae Lee, Yoonjong Huh, Jung-Suk Goo, Sang-Don Lee, Dooyoung Yang, Wooshik Kim

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Effect of channeling of halo ion implantation on threshold voltage shift of metal oxide semiconductor field-effect transistor von Hwang, Hyunsang, Lee, Dong Hoon, Ahn, Jae-Gyung, Byun, Jeong Soo, Yang, Dooyoung

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